APA (7th ed.) Citation

Bagaev, Т. А., Ladugin, М. А., Padalitsa, А. А., & Marmalyuk, А. А. ETCHING MECHANISM OF CCl<sub>4</sub>-DOPED GaAs GROWN BY MOCVD. MIREA - Russian Technological University.

Chicago Style (17th ed.) Citation

Bagaev, Т. А., М. А Ladugin, А. А Padalitsa, and А. А Marmalyuk. ETCHING MECHANISM OF CCl<sub>4</sub>-DOPED GaAs GROWN BY MOCVD. MIREA - Russian Technological University.

MLA (9th ed.) Citation

Bagaev, Т. А., et al. ETCHING MECHANISM OF CCl<sub>4</sub>-DOPED GaAs GROWN BY MOCVD. MIREA - Russian Technological University.

Warning: These citations may not always be 100% accurate.