Effect of deposition rate and substrate microstructure on gas sensitivity of Te thin films

Tellurium thin films have been prepared using different rates (0.1 ÷ 30 nm/s) by physical deposition in vacuum on glassy, sintered alumina and electrochemically nanostructured Al2O3 substrates. The sensitivity to nitrogen dioxide of fabricated films was tested at room temperature. It is shown that t...

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Main Author: Olga Mocreac
Format: Article
Language:English
Published: Engineering Society for Corrosion, Belgrade 2019-12-01
Series:Zaštita Materijala
Subjects:
Online Access:https://www.zastita-materijala.org/index.php/home/article/view/296
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author Olga Mocreac
author_facet Olga Mocreac
author_sort Olga Mocreac
collection DOAJ
description Tellurium thin films have been prepared using different rates (0.1 ÷ 30 nm/s) by physical deposition in vacuum on glassy, sintered alumina and electrochemically nanostructured Al2O3 substrates. The sensitivity to nitrogen dioxide of fabricated films was tested at room temperature. It is shown that the deposition rate strongly influences the microstructure of the films in question, as well as their gas sensing properties. The increasing of deposition rate results in transformation of microcrystalline structure of the film into an amorphous one. Simultaneously, both the gas - sensitivity and the response time decrease. The results are explained in terms of interaction between gas molecule and lone - pair electrons of tellurium atoms.
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publishDate 2019-12-01
publisher Engineering Society for Corrosion, Belgrade
record_format Article
series Zaštita Materijala
spelling doaj-art-1046cff34dca4cc1b1fc83d1d0a6764d2025-08-20T01:58:48ZengEngineering Society for Corrosion, BelgradeZaštita Materijala0351-94652466-25852019-12-0160437938410.5937/zasmat1904379M295Effect of deposition rate and substrate microstructure on gas sensitivity of Te thin filmsOlga Mocreac0Technical University of Moldova, Chisinau, MoldovaTellurium thin films have been prepared using different rates (0.1 ÷ 30 nm/s) by physical deposition in vacuum on glassy, sintered alumina and electrochemically nanostructured Al2O3 substrates. The sensitivity to nitrogen dioxide of fabricated films was tested at room temperature. It is shown that the deposition rate strongly influences the microstructure of the films in question, as well as their gas sensing properties. The increasing of deposition rate results in transformation of microcrystalline structure of the film into an amorphous one. Simultaneously, both the gas - sensitivity and the response time decrease. The results are explained in terms of interaction between gas molecule and lone - pair electrons of tellurium atoms.https://www.zastita-materijala.org/index.php/home/article/view/296deposition rategas sensitivityresponse timesubstratethin film
spellingShingle Olga Mocreac
Effect of deposition rate and substrate microstructure on gas sensitivity of Te thin films
Zaštita Materijala
deposition rate
gas sensitivity
response time
substrate
thin film
title Effect of deposition rate and substrate microstructure on gas sensitivity of Te thin films
title_full Effect of deposition rate and substrate microstructure on gas sensitivity of Te thin films
title_fullStr Effect of deposition rate and substrate microstructure on gas sensitivity of Te thin films
title_full_unstemmed Effect of deposition rate and substrate microstructure on gas sensitivity of Te thin films
title_short Effect of deposition rate and substrate microstructure on gas sensitivity of Te thin films
title_sort effect of deposition rate and substrate microstructure on gas sensitivity of te thin films
topic deposition rate
gas sensitivity
response time
substrate
thin film
url https://www.zastita-materijala.org/index.php/home/article/view/296
work_keys_str_mv AT olgamocreac effectofdepositionrateandsubstratemicrostructureongassensitivityoftethinfilms