Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching

We investigated the effect of substrate misfit strain on the current-induced magnetization switching in magnetic tunnel junctions by combining micromagnetic simulation with phase-field microelasticity theory. Our results indicate that the positive substrate misfit strain can decrease the critical cu...

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Main Authors: H. B. Huang, C. P. Zhao, X. Q. Ma
Format: Article
Language:English
Published: Wiley 2016-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2016/9271407
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author H. B. Huang
C. P. Zhao
X. Q. Ma
author_facet H. B. Huang
C. P. Zhao
X. Q. Ma
author_sort H. B. Huang
collection DOAJ
description We investigated the effect of substrate misfit strain on the current-induced magnetization switching in magnetic tunnel junctions by combining micromagnetic simulation with phase-field microelasticity theory. Our results indicate that the positive substrate misfit strain can decrease the critical current density of magnetization switching by pushing the magnetization from out-of-plane to in-plane directions, while the negative strain pushes the magnetization back to the out-of-plane directions. The magnetic domain evolution is obtained to demonstrate the strain-assisted current-induced magnetization switching.
format Article
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institution Kabale University
issn 1687-8108
1687-8124
language English
publishDate 2016-01-01
publisher Wiley
record_format Article
series Advances in Condensed Matter Physics
spelling doaj-art-10006055cc73497687095ab1c9274e8e2025-02-03T06:07:31ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242016-01-01201610.1155/2016/92714079271407Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization SwitchingH. B. Huang0C. P. Zhao1X. Q. Ma2Department of Physics, University of Science and Technology Beijing, Beijing 100083, ChinaDepartment of Physics, University of Science and Technology Beijing, Beijing 100083, ChinaDepartment of Physics, University of Science and Technology Beijing, Beijing 100083, ChinaWe investigated the effect of substrate misfit strain on the current-induced magnetization switching in magnetic tunnel junctions by combining micromagnetic simulation with phase-field microelasticity theory. Our results indicate that the positive substrate misfit strain can decrease the critical current density of magnetization switching by pushing the magnetization from out-of-plane to in-plane directions, while the negative strain pushes the magnetization back to the out-of-plane directions. The magnetic domain evolution is obtained to demonstrate the strain-assisted current-induced magnetization switching.http://dx.doi.org/10.1155/2016/9271407
spellingShingle H. B. Huang
C. P. Zhao
X. Q. Ma
Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching
Advances in Condensed Matter Physics
title Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching
title_full Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching
title_fullStr Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching
title_full_unstemmed Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching
title_short Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching
title_sort micromagnetic simulation of strain assisted current induced magnetization switching
url http://dx.doi.org/10.1155/2016/9271407
work_keys_str_mv AT hbhuang micromagneticsimulationofstrainassistedcurrentinducedmagnetizationswitching
AT cpzhao micromagneticsimulationofstrainassistedcurrentinducedmagnetizationswitching
AT xqma micromagneticsimulationofstrainassistedcurrentinducedmagnetizationswitching