Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching
We investigated the effect of substrate misfit strain on the current-induced magnetization switching in magnetic tunnel junctions by combining micromagnetic simulation with phase-field microelasticity theory. Our results indicate that the positive substrate misfit strain can decrease the critical cu...
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Language: | English |
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Wiley
2016-01-01
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Series: | Advances in Condensed Matter Physics |
Online Access: | http://dx.doi.org/10.1155/2016/9271407 |
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author | H. B. Huang C. P. Zhao X. Q. Ma |
author_facet | H. B. Huang C. P. Zhao X. Q. Ma |
author_sort | H. B. Huang |
collection | DOAJ |
description | We investigated the effect of substrate misfit strain on the current-induced magnetization switching in magnetic tunnel junctions by combining micromagnetic simulation with phase-field microelasticity theory. Our results indicate that the positive substrate misfit strain can decrease the critical current density of magnetization switching by pushing the magnetization from out-of-plane to in-plane directions, while the negative strain pushes the magnetization back to the out-of-plane directions. The magnetic domain evolution is obtained to demonstrate the strain-assisted current-induced magnetization switching. |
format | Article |
id | doaj-art-10006055cc73497687095ab1c9274e8e |
institution | Kabale University |
issn | 1687-8108 1687-8124 |
language | English |
publishDate | 2016-01-01 |
publisher | Wiley |
record_format | Article |
series | Advances in Condensed Matter Physics |
spelling | doaj-art-10006055cc73497687095ab1c9274e8e2025-02-03T06:07:31ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242016-01-01201610.1155/2016/92714079271407Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization SwitchingH. B. Huang0C. P. Zhao1X. Q. Ma2Department of Physics, University of Science and Technology Beijing, Beijing 100083, ChinaDepartment of Physics, University of Science and Technology Beijing, Beijing 100083, ChinaDepartment of Physics, University of Science and Technology Beijing, Beijing 100083, ChinaWe investigated the effect of substrate misfit strain on the current-induced magnetization switching in magnetic tunnel junctions by combining micromagnetic simulation with phase-field microelasticity theory. Our results indicate that the positive substrate misfit strain can decrease the critical current density of magnetization switching by pushing the magnetization from out-of-plane to in-plane directions, while the negative strain pushes the magnetization back to the out-of-plane directions. The magnetic domain evolution is obtained to demonstrate the strain-assisted current-induced magnetization switching.http://dx.doi.org/10.1155/2016/9271407 |
spellingShingle | H. B. Huang C. P. Zhao X. Q. Ma Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching Advances in Condensed Matter Physics |
title | Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching |
title_full | Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching |
title_fullStr | Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching |
title_full_unstemmed | Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching |
title_short | Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching |
title_sort | micromagnetic simulation of strain assisted current induced magnetization switching |
url | http://dx.doi.org/10.1155/2016/9271407 |
work_keys_str_mv | AT hbhuang micromagneticsimulationofstrainassistedcurrentinducedmagnetizationswitching AT cpzhao micromagneticsimulationofstrainassistedcurrentinducedmagnetizationswitching AT xqma micromagneticsimulationofstrainassistedcurrentinducedmagnetizationswitching |