Electron tunneling in the germanium/silicon heterostructure with germanium quantum dots: theory
It is shown that electron tunneling through a potential barrier that separates two quantum dots of germanium leads to the splitting of electron states localized over spherical interfaces (a quantum dot – a silicon matrix). The dependence of the splitting values of the electron levels on the paramet...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Chuiko Institute of Surface Chemistry of NAS of Ukraine
2021-11-01
|
| Series: | Хімія, фізика та технологія поверхні |
| Subjects: | |
| Online Access: | https://cpts.com.ua/index.php/cpts/article/view/601 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|