Complete crack elimination in strained SiGe/Ge(111) heterostructures by pre-patterning of Si(111) substrates
We propose a novel method to completely eliminate cracks, which are unavoidably generated in strained SiGe(111) layers grown on Ge(111). We perform mesa-patterning of the Si(111) substrate first, and subsequently grow the strained SiGe/Ge(111) on the pre-patterned Si. It is resultantly demonstrated...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/add83c |
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| author | M. Nagao R. Mizoguchi Y. Shibahara K. Shikatake M. Yamada K. Hamaya K. Sawano |
| author_facet | M. Nagao R. Mizoguchi Y. Shibahara K. Shikatake M. Yamada K. Hamaya K. Sawano |
| author_sort | M. Nagao |
| collection | DOAJ |
| description | We propose a novel method to completely eliminate cracks, which are unavoidably generated in strained SiGe(111) layers grown on Ge(111). We perform mesa-patterning of the Si(111) substrate first, and subsequently grow the strained SiGe/Ge(111) on the pre-patterned Si. It is resultantly demonstrated that the crack generation is almost completely suppressed on the patterned mesa areas. The SiGe(111) layer formed here is demonstrated to serve for spintronic devices with pure spin current transport at room temperature. This means that the proposed method is promising for realizing high quality strained SiGe/Ge heterostrucutures and their various device applications. |
| format | Article |
| id | doaj-art-0ef5a4fa40d64b63859dccb11fa265bd |
| institution | OA Journals |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-0ef5a4fa40d64b63859dccb11fa265bd2025-08-20T02:26:02ZengIOP PublishingApplied Physics Express1882-07862025-01-0118505550410.35848/1882-0786/add83cComplete crack elimination in strained SiGe/Ge(111) heterostructures by pre-patterning of Si(111) substratesM. Nagao0R. Mizoguchi1Y. Shibahara2K. Shikatake3M. Yamada4K. Hamaya5K. Sawano6Advanced Research Laboratories, Tokyo City University , 1-28-1 Tamazutsumi, Tokyo 158-8557, JapanAdvanced Research Laboratories, Tokyo City University , 1-28-1 Tamazutsumi, Tokyo 158-8557, JapanAdvanced Research Laboratories, Tokyo City University , 1-28-1 Tamazutsumi, Tokyo 158-8557, JapanCenter for Spintronics Research Network, Graduate School of Engineering Science, The University of Osaka, 1-3 Machikaneyama, Toyonaka 560-8531, JapanAdvanced Research Laboratories, Tokyo City University , 1-28-1 Tamazutsumi, Tokyo 158-8557, JapanCenter for Spintronics Research Network, Graduate School of Engineering Science, The University of Osaka, 1-3 Machikaneyama, Toyonaka 560-8531, Japan; Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives, The University of Osaka, 2-1 Yamadaoka, Suita, Osaka 565-0871, JapanAdvanced Research Laboratories, Tokyo City University , 1-28-1 Tamazutsumi, Tokyo 158-8557, JapanWe propose a novel method to completely eliminate cracks, which are unavoidably generated in strained SiGe(111) layers grown on Ge(111). We perform mesa-patterning of the Si(111) substrate first, and subsequently grow the strained SiGe/Ge(111) on the pre-patterned Si. It is resultantly demonstrated that the crack generation is almost completely suppressed on the patterned mesa areas. The SiGe(111) layer formed here is demonstrated to serve for spintronic devices with pure spin current transport at room temperature. This means that the proposed method is promising for realizing high quality strained SiGe/Ge heterostrucutures and their various device applications.https://doi.org/10.35848/1882-0786/add83cGermaniumSilicon Germaniumcrystal growthcrackspintronic devices |
| spellingShingle | M. Nagao R. Mizoguchi Y. Shibahara K. Shikatake M. Yamada K. Hamaya K. Sawano Complete crack elimination in strained SiGe/Ge(111) heterostructures by pre-patterning of Si(111) substrates Applied Physics Express Germanium Silicon Germanium crystal growth crack spintronic devices |
| title | Complete crack elimination in strained SiGe/Ge(111) heterostructures by pre-patterning of Si(111) substrates |
| title_full | Complete crack elimination in strained SiGe/Ge(111) heterostructures by pre-patterning of Si(111) substrates |
| title_fullStr | Complete crack elimination in strained SiGe/Ge(111) heterostructures by pre-patterning of Si(111) substrates |
| title_full_unstemmed | Complete crack elimination in strained SiGe/Ge(111) heterostructures by pre-patterning of Si(111) substrates |
| title_short | Complete crack elimination in strained SiGe/Ge(111) heterostructures by pre-patterning of Si(111) substrates |
| title_sort | complete crack elimination in strained sige ge 111 heterostructures by pre patterning of si 111 substrates |
| topic | Germanium Silicon Germanium crystal growth crack spintronic devices |
| url | https://doi.org/10.35848/1882-0786/add83c |
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