Complete crack elimination in strained SiGe/Ge(111) heterostructures by pre-patterning of Si(111) substrates
We propose a novel method to completely eliminate cracks, which are unavoidably generated in strained SiGe(111) layers grown on Ge(111). We perform mesa-patterning of the Si(111) substrate first, and subsequently grow the strained SiGe/Ge(111) on the pre-patterned Si. It is resultantly demonstrated...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/add83c |
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| Summary: | We propose a novel method to completely eliminate cracks, which are unavoidably generated in strained SiGe(111) layers grown on Ge(111). We perform mesa-patterning of the Si(111) substrate first, and subsequently grow the strained SiGe/Ge(111) on the pre-patterned Si. It is resultantly demonstrated that the crack generation is almost completely suppressed on the patterned mesa areas. The SiGe(111) layer formed here is demonstrated to serve for spintronic devices with pure spin current transport at room temperature. This means that the proposed method is promising for realizing high quality strained SiGe/Ge heterostrucutures and their various device applications. |
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| ISSN: | 1882-0786 |