High Resistivity of Single Crystal CsPbBr3 Semiconductor for Radiation Detection via Proposed Temperature‐Concentration Balance Method
Abstract Lead halide perovskites have shown high performance in radiation detection techniques owing to their excellent optoelectronic properties and stability. However, the high resistivity of the CsPbBr3 radiation detector is intensively dependent on the growth quality of the single crystal, which...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-07-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400972 |
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| author | Xuebao Zhang Qingbo Wang Ying Gao Junying Zhang Youpeng Wu Peijie Ma Lin Ma Jianing Cai Fenglei Niu Qiang Zhao Yunchao Tang Junwei Bian Chenming Liang Chunxia Shen Zeqian Wu Fang Liu Zhiling Hou Jinxing Cheng |
| author_facet | Xuebao Zhang Qingbo Wang Ying Gao Junying Zhang Youpeng Wu Peijie Ma Lin Ma Jianing Cai Fenglei Niu Qiang Zhao Yunchao Tang Junwei Bian Chenming Liang Chunxia Shen Zeqian Wu Fang Liu Zhiling Hou Jinxing Cheng |
| author_sort | Xuebao Zhang |
| collection | DOAJ |
| description | Abstract Lead halide perovskites have shown high performance in radiation detection techniques owing to their excellent optoelectronic properties and stability. However, the high resistivity of the CsPbBr3 radiation detector is intensively dependent on the growth quality of the single crystal, which is closely related to temperature gradients or the introduction of additives. Herein, a CsPbBr3 single crystal with high radiation performance is grown based on the proposed temperature‐concentration balance (TCB) method. The prepared perfect single crystal remains high quality in repeated experiments, which belongs to the Pnma space group, benefiting from the effective growth method. Based on the CsPbBr3 single crystal, the fabricated detector with the asymmetrical Au‐In electrodes demonstrates outstanding linearity under reverse bias. It exhibits a lower dark current (2.66 × 10−2 nA) and high resistivity, which helps acquire a broader radiation measurement range. Moreover, the emission spectrum of the CsPbBr3 single crystals exhibits a sharp emission peak at 527 nm and narrower full width at half maximum, making crystals easily couple into radiation detectors. These findings provide insight into the growth and regulation of CsPbBr3 crystal for more extensive applications in radiation detection in the future. |
| format | Article |
| id | doaj-art-0ec57c5134744c738540e46ab4f8d761 |
| institution | DOAJ |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-07-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-0ec57c5134744c738540e46ab4f8d7612025-08-20T02:39:58ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-07-011111n/an/a10.1002/aelm.202400972High Resistivity of Single Crystal CsPbBr3 Semiconductor for Radiation Detection via Proposed Temperature‐Concentration Balance MethodXuebao Zhang0Qingbo Wang1Ying Gao2Junying Zhang3Youpeng Wu4Peijie Ma5Lin Ma6Jianing Cai7Fenglei Niu8Qiang Zhao9Yunchao Tang10Junwei Bian11Chenming Liang12Chunxia Shen13Zeqian Wu14Fang Liu15Zhiling Hou16Jinxing Cheng17Institute of NBC Ddednce No. 1 Yongfang Town Central North Street, Changping District Beijing ChinaInstitute of Nuclear and New Energy Technology Tsinghua University Beijing 100084 ChinaInstitute of Nuclear and New Energy Technology Tsinghua University Beijing 100084 ChinaSchool of Physics and Optoelectronic Engineering Beijing University of Technology Beijing 100124 ChinaInstitute of Nuclear and New Energy Technology Tsinghua University Beijing 100084 ChinaCollege of Materials Science and Engineering Beijing University of Technology Beijing 100124 ChinaCollege of Materials Science and Engineering Beijing University of Technology Beijing 100124 ChinaSchool of Physics and Optoelectronic Engineering Beijing University of Technology Beijing 100124 ChinaBeijing Key Laboratory of Passive Safety Technology for Nuclear Energy School of Nuclear Science and Engineering North China Electric Power University Beijing 102206 ChinaBeijing Key Laboratory of Passive Safety Technology for Nuclear Energy School of Nuclear Science and Engineering North China Electric Power University Beijing 102206 ChinaBeijing Key Laboratory of Passive Safety Technology for Nuclear Energy School of Nuclear Science and Engineering North China Electric Power University Beijing 102206 ChinaBeijing Key Laboratory of Passive Safety Technology for Nuclear Energy School of Nuclear Science and Engineering North China Electric Power University Beijing 102206 ChinaSchool of Chemistry Beihang University Beijing 100191 ChinaInstitute of NBC Ddednce No. 1 Yongfang Town Central North Street, Changping District Beijing ChinaInstitute of NBC Ddednce No. 1 Yongfang Town Central North Street, Changping District Beijing ChinaBeijing Key Laboratory of Passive Safety Technology for Nuclear Energy School of Nuclear Science and Engineering North China Electric Power University Beijing 102206 ChinaSchool of Physics and Optoelectronic Engineering Beijing University of Technology Beijing 100124 ChinaInstitute of Nuclear and New Energy Technology Tsinghua University Beijing 100084 ChinaAbstract Lead halide perovskites have shown high performance in radiation detection techniques owing to their excellent optoelectronic properties and stability. However, the high resistivity of the CsPbBr3 radiation detector is intensively dependent on the growth quality of the single crystal, which is closely related to temperature gradients or the introduction of additives. Herein, a CsPbBr3 single crystal with high radiation performance is grown based on the proposed temperature‐concentration balance (TCB) method. The prepared perfect single crystal remains high quality in repeated experiments, which belongs to the Pnma space group, benefiting from the effective growth method. Based on the CsPbBr3 single crystal, the fabricated detector with the asymmetrical Au‐In electrodes demonstrates outstanding linearity under reverse bias. It exhibits a lower dark current (2.66 × 10−2 nA) and high resistivity, which helps acquire a broader radiation measurement range. Moreover, the emission spectrum of the CsPbBr3 single crystals exhibits a sharp emission peak at 527 nm and narrower full width at half maximum, making crystals easily couple into radiation detectors. These findings provide insight into the growth and regulation of CsPbBr3 crystal for more extensive applications in radiation detection in the future.https://doi.org/10.1002/aelm.202400972CsPbBr3radiation detectorsingle crystal growthtemperature‐concentration balance |
| spellingShingle | Xuebao Zhang Qingbo Wang Ying Gao Junying Zhang Youpeng Wu Peijie Ma Lin Ma Jianing Cai Fenglei Niu Qiang Zhao Yunchao Tang Junwei Bian Chenming Liang Chunxia Shen Zeqian Wu Fang Liu Zhiling Hou Jinxing Cheng High Resistivity of Single Crystal CsPbBr3 Semiconductor for Radiation Detection via Proposed Temperature‐Concentration Balance Method Advanced Electronic Materials CsPbBr3 radiation detector single crystal growth temperature‐concentration balance |
| title | High Resistivity of Single Crystal CsPbBr3 Semiconductor for Radiation Detection via Proposed Temperature‐Concentration Balance Method |
| title_full | High Resistivity of Single Crystal CsPbBr3 Semiconductor for Radiation Detection via Proposed Temperature‐Concentration Balance Method |
| title_fullStr | High Resistivity of Single Crystal CsPbBr3 Semiconductor for Radiation Detection via Proposed Temperature‐Concentration Balance Method |
| title_full_unstemmed | High Resistivity of Single Crystal CsPbBr3 Semiconductor for Radiation Detection via Proposed Temperature‐Concentration Balance Method |
| title_short | High Resistivity of Single Crystal CsPbBr3 Semiconductor for Radiation Detection via Proposed Temperature‐Concentration Balance Method |
| title_sort | high resistivity of single crystal cspbbr3 semiconductor for radiation detection via proposed temperature concentration balance method |
| topic | CsPbBr3 radiation detector single crystal growth temperature‐concentration balance |
| url | https://doi.org/10.1002/aelm.202400972 |
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