Novel three-dimensional stacked capacitorless DRAM architecture using partially etched nanosheets for high-density memory applications

Novel three-dimensional stacked capacitorless DRAM architecture using partially etched nanosheets for high-density memory applications

Abstract This study presents a novel three-dimensional stacked capacitorless dynamic random access memory (1T-DRAM) architecture, designed using a partially etched nanosheet (PE NS) to overcome the scaling limitations of traditional DRAM designs. By leveraging the floating body effect, this architec...

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Bibliographic Details
Main Authors: Min Seok Kim, Sang Ho Lee, Jin Park, Seung Ji Bae, Jeong Woo Hong, Won Suk Koh, Gang San Yun, Jaewon Jang, Jin-Hyuk Bae, In Man Kang
Format: Article
Language:English
Published: Springer 2025-02-01
Series:Discover Nano
Subjects:
Three-dimensional
Capacitorless dynamic random access memory (1T-DRAM)
Nanosheet
Floating body effect
Disturbance
Online Access:https://doi.org/10.1186/s11671-025-04201-1
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https://doi.org/10.1186/s11671-025-04201-1

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