Multi-Level Cell Structure for Capacitor-Less 1T DRAM With SiGe-Based Separated Data Storing Regions
One-transistor dynamic random-access memory (1T DRAM) offers significant advantages in fabrication process and scalability over the traditional one-transistor one-capacitor (1T-1C) DRAM due to its simplified structure that eliminates the need for capacitors. However, a limitation arises from its sin...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10937212/ |
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