500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit
Abstract The authors’ present a silicon‐on‐insulator (SOI) laterally diffused metal‐oxide‐semiconductor field‐effect transistor (LDMOSFET) with β‐Ga2O3 , which is a large bandgap semiconductor (β‐LDMOSFET), for increasing breakdown voltage (VBR) and power figure of merit. The fundamental purpose is...
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| Format: | Article |
| Language: | English |
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Wiley
2023-07-01
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| Series: | IET Circuits, Devices and Systems |
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| Online Access: | https://doi.org/10.1049/cds2.12158 |
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| author | Nesa Abedi Rik Ali. A. Orouji Dariush Madadi |
| author_facet | Nesa Abedi Rik Ali. A. Orouji Dariush Madadi |
| author_sort | Nesa Abedi Rik |
| collection | DOAJ |
| description | Abstract The authors’ present a silicon‐on‐insulator (SOI) laterally diffused metal‐oxide‐semiconductor field‐effect transistor (LDMOSFET) with β‐Ga2O3 , which is a large bandgap semiconductor (β‐LDMOSFET), for increasing breakdown voltage (VBR) and power figure of merit. The fundamental purpose is to use a β‐Ga2O3 semiconductor instead of silicon material due to its large breakdown field. The characteristics of β‐LDMOSFET are analysed to those of standard LDMOSFET, such as VBR, ON‐resistance (RON), power figure of merit (PFOM), and radio frequency (RF) performances. The effects of RF, such as gate‐drain capacitance (CGD), gate‐source capacitance (CGS), transit frequency (fT), and maximum frequency of oscillation (fMAX) have been investigated. The β‐LDMOSFET structure outperforms performance in the VBR by increasing it to 500 versus 84.4 V in standard LDMOSFET design. The suggested β‐LDMOSFET has RON ~ 2.3 mΩ.cm−2 and increased the PFOM (VBR2/RON) to 108.6 MW/cm2. All the simulations are done with TCAD and simulation models are calibrated with the experimental data. |
| format | Article |
| id | doaj-art-0dbeb0df787f4333b2340672b30bdddb |
| institution | Kabale University |
| issn | 1751-858X 1751-8598 |
| language | English |
| publishDate | 2023-07-01 |
| publisher | Wiley |
| record_format | Article |
| series | IET Circuits, Devices and Systems |
| spelling | doaj-art-0dbeb0df787f4333b2340672b30bdddb2025-02-03T06:45:05ZengWileyIET Circuits, Devices and Systems1751-858X1751-85982023-07-0117419920410.1049/cds2.12158500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of meritNesa Abedi Rik0Ali. A. Orouji1Dariush Madadi2Electrical Engineering Department Semnan University Semnan IranElectrical Engineering Department Semnan University Semnan IranElectrical Engineering Department Semnan University Semnan IranAbstract The authors’ present a silicon‐on‐insulator (SOI) laterally diffused metal‐oxide‐semiconductor field‐effect transistor (LDMOSFET) with β‐Ga2O3 , which is a large bandgap semiconductor (β‐LDMOSFET), for increasing breakdown voltage (VBR) and power figure of merit. The fundamental purpose is to use a β‐Ga2O3 semiconductor instead of silicon material due to its large breakdown field. The characteristics of β‐LDMOSFET are analysed to those of standard LDMOSFET, such as VBR, ON‐resistance (RON), power figure of merit (PFOM), and radio frequency (RF) performances. The effects of RF, such as gate‐drain capacitance (CGD), gate‐source capacitance (CGS), transit frequency (fT), and maximum frequency of oscillation (fMAX) have been investigated. The β‐LDMOSFET structure outperforms performance in the VBR by increasing it to 500 versus 84.4 V in standard LDMOSFET design. The suggested β‐LDMOSFET has RON ~ 2.3 mΩ.cm−2 and increased the PFOM (VBR2/RON) to 108.6 MW/cm2. All the simulations are done with TCAD and simulation models are calibrated with the experimental data.https://doi.org/10.1049/cds2.12158Field Effect TransistorFigure of MeritMOSFETPower Semiconductor Devices |
| spellingShingle | Nesa Abedi Rik Ali. A. Orouji Dariush Madadi 500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit IET Circuits, Devices and Systems Field Effect Transistor Figure of Merit MOSFET Power Semiconductor Devices |
| title | 500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit |
| title_full | 500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit |
| title_fullStr | 500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit |
| title_full_unstemmed | 500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit |
| title_short | 500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit |
| title_sort | 500 v breakdown voltage in β ga2o3 laterally diffused metal oxide semiconductor field effect transistor with 108 mw cm2 power figure of merit |
| topic | Field Effect Transistor Figure of Merit MOSFET Power Semiconductor Devices |
| url | https://doi.org/10.1049/cds2.12158 |
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