APA (7th ed.) Citation

Rik, N. A., Orouji, A. A., & Madadi, D. 500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit. Wiley.

Chicago Style (17th ed.) Citation

Rik, Nesa Abedi, Ali. A. Orouji, and Dariush Madadi. 500 V Breakdown Voltage in β‐Ga2O3 Laterally Diffused Metal‐oxide‐semiconductor Field‐effect Transistor with 108 MW/cm2 Power Figure of Merit. Wiley.

MLA (9th ed.) Citation

Rik, Nesa Abedi, et al. 500 V Breakdown Voltage in β‐Ga2O3 Laterally Diffused Metal‐oxide‐semiconductor Field‐effect Transistor with 108 MW/cm2 Power Figure of Merit. Wiley.