The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET
Metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FeFETs have significant potential for use in non-volatile memory applications. This is primarily due to their compatibility with CMOS technology and reliable switching characteristics. Previous studies have primarily concentrated on the endur...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10734331/ |
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| author | Junghyeon Hwang Giuk Kim Hongrae Joh Jinho Ahn Sanghun Jeon |
| author_facet | Junghyeon Hwang Giuk Kim Hongrae Joh Jinho Ahn Sanghun Jeon |
| author_sort | Junghyeon Hwang |
| collection | DOAJ |
| description | Metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FeFETs have significant potential for use in non-volatile memory applications. This is primarily due to their compatibility with CMOS technology and reliable switching characteristics. Previous studies have primarily concentrated on the endurance and memory window properties, while this study focuses on the short-term (<<inline-formula> <tex-math notation="LaTeX">$1~\mu $ </tex-math></inline-formula>s) retention region of MFMIS FeFETs. Specifically, we examine the impact of the capacitance ratio of the ferroelectric capacitor (CFE) and the MOS capacitor (CDE) on short-term retention. Additionally, we conducted simulations to validate the experimental observations and investigate the interaction of the depolarization field with the charge trapping and polarization of the MFMIS structure. This study emphasizes the crucial role of controlling the CDE: <inline-formula> <tex-math notation="LaTeX">${\mathrm { C}}_{\mathrm { FE}}$ </tex-math></inline-formula> ratio in enhancing the short-term retention of MFMIS FeFETs. Its findings enhance our understanding of short-term retention mechanisms and provide a pathway for improving performance and functionality in non-volatile memory technology design. |
| format | Article |
| id | doaj-art-0d41dabd5f1940ba87662a880a19bb7c |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-0d41dabd5f1940ba87662a880a19bb7c2025-01-29T00:00:30ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011298899210.1109/JEDS.2024.348586910734331The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFETJunghyeon Hwang0https://orcid.org/0000-0002-2026-2097Giuk Kim1https://orcid.org/0000-0002-4517-080XHongrae Joh2https://orcid.org/0000-0003-4532-9582Jinho Ahn3https://orcid.org/0000-0001-8271-5998Sanghun Jeon4https://orcid.org/0000-0002-4222-1587School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South KoreaSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South KoreaSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South KoreaDivision of Materials Science and Engineering, Hanyang University, Seoul, Republic of KoreaSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South KoreaMetal-ferroelectric-metal-insulator-semiconductor (MFMIS) FeFETs have significant potential for use in non-volatile memory applications. This is primarily due to their compatibility with CMOS technology and reliable switching characteristics. Previous studies have primarily concentrated on the endurance and memory window properties, while this study focuses on the short-term (<<inline-formula> <tex-math notation="LaTeX">$1~\mu $ </tex-math></inline-formula>s) retention region of MFMIS FeFETs. Specifically, we examine the impact of the capacitance ratio of the ferroelectric capacitor (CFE) and the MOS capacitor (CDE) on short-term retention. Additionally, we conducted simulations to validate the experimental observations and investigate the interaction of the depolarization field with the charge trapping and polarization of the MFMIS structure. This study emphasizes the crucial role of controlling the CDE: <inline-formula> <tex-math notation="LaTeX">${\mathrm { C}}_{\mathrm { FE}}$ </tex-math></inline-formula> ratio in enhancing the short-term retention of MFMIS FeFETs. Its findings enhance our understanding of short-term retention mechanisms and provide a pathway for improving performance and functionality in non-volatile memory technology design.https://ieeexplore.ieee.org/document/10734331/Hafnia ferroelectricferroelectric FET (FeFET)depolarization fieldretention |
| spellingShingle | Junghyeon Hwang Giuk Kim Hongrae Joh Jinho Ahn Sanghun Jeon The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET IEEE Journal of the Electron Devices Society Hafnia ferroelectric ferroelectric FET (FeFET) depolarization field retention |
| title | The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET |
| title_full | The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET |
| title_fullStr | The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET |
| title_full_unstemmed | The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET |
| title_short | The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET |
| title_sort | effect of ferroelectric dielectric capacitance ratio on short term retention characteristics of mfmis fefet |
| topic | Hafnia ferroelectric ferroelectric FET (FeFET) depolarization field retention |
| url | https://ieeexplore.ieee.org/document/10734331/ |
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