Skyrmion-based synaptic element with strain-mediated plasticity
We present a novel skyrmion-based synaptic device featuring a multilayer structure of Ferromagnetic (FM)/Heavy metal (HM)/Ferroelectric (FE)/HM/FM, specifically (Co/Pt) _n /(011)PMN-PT/(Co/Pt) _n . The FE layer sandwiched between the two FM layers hosting the skyrmions enables electric field-induced...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Neuromorphic Computing and Engineering |
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| Online Access: | https://doi.org/10.1088/2634-4386/adf992 |
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| author | Jasmine Kaur Sneh Saurabh Shubham Sahay |
| author_facet | Jasmine Kaur Sneh Saurabh Shubham Sahay |
| author_sort | Jasmine Kaur |
| collection | DOAJ |
| description | We present a novel skyrmion-based synaptic device featuring a multilayer structure of Ferromagnetic (FM)/Heavy metal (HM)/Ferroelectric (FE)/HM/FM, specifically (Co/Pt) _n /(011)PMN-PT/(Co/Pt) _n . The FE layer sandwiched between the two FM layers hosting the skyrmions enables electric field-induced strain-mediated modulation of perpendicular magnetic anisotropy in the FM layers. This mechanism facilitates tunable skyrmion sizes, achieving continuous non-volatile conductance states due to remnant strain in the FE layer. The proposed device exhibits both synaptic potentiation and depression with the aid of differential MTJ readout unlike the prior skyrmion-based synaptic implementations and exhibits superior energy-efficiency compared to the other emerging non-volatile memory-based synaptic devices. Furthermore, a VGG-8 convolutional neural network utilizing the proposed synaptic element as weights achieves an accuracy of ∼90.39% after training on the CIFAR-10 dataset. |
| format | Article |
| id | doaj-art-0d230c0a0d804f3cbb49dcf1f1dd22e1 |
| institution | Kabale University |
| issn | 2634-4386 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Neuromorphic Computing and Engineering |
| spelling | doaj-art-0d230c0a0d804f3cbb49dcf1f1dd22e12025-08-21T11:00:33ZengIOP PublishingNeuromorphic Computing and Engineering2634-43862025-01-015303401310.1088/2634-4386/adf992Skyrmion-based synaptic element with strain-mediated plasticityJasmine Kaur0https://orcid.org/0000-0002-2905-4593Sneh Saurabh1https://orcid.org/0000-0002-0587-3391Shubham Sahay2https://orcid.org/0000-0001-9992-3240ECE Department, IIIT Delhi , Delhi, IndiaECE Department, IIIT Delhi , Delhi, IndiaDepartment of Electrical Engineering , IIT Kanpur, Kanpur, IndiaWe present a novel skyrmion-based synaptic device featuring a multilayer structure of Ferromagnetic (FM)/Heavy metal (HM)/Ferroelectric (FE)/HM/FM, specifically (Co/Pt) _n /(011)PMN-PT/(Co/Pt) _n . The FE layer sandwiched between the two FM layers hosting the skyrmions enables electric field-induced strain-mediated modulation of perpendicular magnetic anisotropy in the FM layers. This mechanism facilitates tunable skyrmion sizes, achieving continuous non-volatile conductance states due to remnant strain in the FE layer. The proposed device exhibits both synaptic potentiation and depression with the aid of differential MTJ readout unlike the prior skyrmion-based synaptic implementations and exhibits superior energy-efficiency compared to the other emerging non-volatile memory-based synaptic devices. Furthermore, a VGG-8 convolutional neural network utilizing the proposed synaptic element as weights achieves an accuracy of ∼90.39% after training on the CIFAR-10 dataset.https://doi.org/10.1088/2634-4386/adf992spintronicsskyrmionmultiferroic heterostructureferroelectricpiezoelectricmagnetoelectric |
| spellingShingle | Jasmine Kaur Sneh Saurabh Shubham Sahay Skyrmion-based synaptic element with strain-mediated plasticity Neuromorphic Computing and Engineering spintronics skyrmion multiferroic heterostructure ferroelectric piezoelectric magnetoelectric |
| title | Skyrmion-based synaptic element with strain-mediated plasticity |
| title_full | Skyrmion-based synaptic element with strain-mediated plasticity |
| title_fullStr | Skyrmion-based synaptic element with strain-mediated plasticity |
| title_full_unstemmed | Skyrmion-based synaptic element with strain-mediated plasticity |
| title_short | Skyrmion-based synaptic element with strain-mediated plasticity |
| title_sort | skyrmion based synaptic element with strain mediated plasticity |
| topic | spintronics skyrmion multiferroic heterostructure ferroelectric piezoelectric magnetoelectric |
| url | https://doi.org/10.1088/2634-4386/adf992 |
| work_keys_str_mv | AT jasminekaur skyrmionbasedsynapticelementwithstrainmediatedplasticity AT snehsaurabh skyrmionbasedsynapticelementwithstrainmediatedplasticity AT shubhamsahay skyrmionbasedsynapticelementwithstrainmediatedplasticity |