Performance Comparison between Enhanced GaN MOSFET and Si MOSFET in Single Phase Full Bridge Inverter
In order to analyze the causes and correlations of gate drive loss and switching loss of GaN MOSFET and Si MOSFET, a single-phase full-bridge inverter topology was proposed to build a power switch device efficiency test platform and the working efficiencies of GaN MOSFET and Si MOSFET at different s...
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| Format: | Article |
| Language: | zho |
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Editorial Office of Control and Information Technology
2017-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.06.010 |
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| _version_ | 1849224698435469312 |
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| author | DENG Xiaoxiang LI Peng DAI Chaofan YANG Ronghao |
| author_facet | DENG Xiaoxiang LI Peng DAI Chaofan YANG Ronghao |
| author_sort | DENG Xiaoxiang |
| collection | DOAJ |
| description | In order to analyze the causes and correlations of gate drive loss and switching loss of GaN MOSFET and Si MOSFET, a single-phase full-bridge inverter topology was proposed to build a power switch device efficiency test platform and the working efficiencies of GaN MOSFET and Si MOSFET at different switching frequencies and different temperatures were tested using the test platform. The experimental results show that the efficiecies of the inverter with enhanced GaN MOSFETs are respectively 1.47% and 1.6% higher than that of the inverter with Si MOSFETs at the switching frequencies of 50 kHz and 120 kHz . The efficiencies of the inverter with enhanced GaN MOSFETs are respectively 1.8%, 1.9%, 2.0% and 2.1% higher than that of the inverter with Si MOSFETs at different operating temperatures of 40 ℃ , 50 ℃ , 60 ℃ 70 ℃ . The results showed that the efficiency of enhanced GaN MOSFET is higher, with increasing switching frequency and higher working temperature. |
| format | Article |
| id | doaj-art-0c7ff26aefe245bfbb135afd42516fd2 |
| institution | Kabale University |
| issn | 2096-5427 |
| language | zho |
| publishDate | 2017-01-01 |
| publisher | Editorial Office of Control and Information Technology |
| record_format | Article |
| series | Kongzhi Yu Xinxi Jishu |
| spelling | doaj-art-0c7ff26aefe245bfbb135afd42516fd22025-08-25T06:55:02ZzhoEditorial Office of Control and Information TechnologyKongzhi Yu Xinxi Jishu2096-54272017-01-0134485182330220Performance Comparison between Enhanced GaN MOSFET and Si MOSFET in Single Phase Full Bridge InverterDENG XiaoxiangLI PengDAI ChaofanYANG RonghaoIn order to analyze the causes and correlations of gate drive loss and switching loss of GaN MOSFET and Si MOSFET, a single-phase full-bridge inverter topology was proposed to build a power switch device efficiency test platform and the working efficiencies of GaN MOSFET and Si MOSFET at different switching frequencies and different temperatures were tested using the test platform. The experimental results show that the efficiecies of the inverter with enhanced GaN MOSFETs are respectively 1.47% and 1.6% higher than that of the inverter with Si MOSFETs at the switching frequencies of 50 kHz and 120 kHz . The efficiencies of the inverter with enhanced GaN MOSFETs are respectively 1.8%, 1.9%, 2.0% and 2.1% higher than that of the inverter with Si MOSFETs at different operating temperatures of 40 ℃ , 50 ℃ , 60 ℃ 70 ℃ . The results showed that the efficiency of enhanced GaN MOSFET is higher, with increasing switching frequency and higher working temperature.http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.06.010single-phase full-bridge inverterwide bandgapenhanced GaN MOSFETswitching lossgate drive loss |
| spellingShingle | DENG Xiaoxiang LI Peng DAI Chaofan YANG Ronghao Performance Comparison between Enhanced GaN MOSFET and Si MOSFET in Single Phase Full Bridge Inverter Kongzhi Yu Xinxi Jishu single-phase full-bridge inverter wide bandgap enhanced GaN MOSFET switching loss gate drive loss |
| title | Performance Comparison between Enhanced GaN MOSFET and Si MOSFET in Single Phase Full Bridge Inverter |
| title_full | Performance Comparison between Enhanced GaN MOSFET and Si MOSFET in Single Phase Full Bridge Inverter |
| title_fullStr | Performance Comparison between Enhanced GaN MOSFET and Si MOSFET in Single Phase Full Bridge Inverter |
| title_full_unstemmed | Performance Comparison between Enhanced GaN MOSFET and Si MOSFET in Single Phase Full Bridge Inverter |
| title_short | Performance Comparison between Enhanced GaN MOSFET and Si MOSFET in Single Phase Full Bridge Inverter |
| title_sort | performance comparison between enhanced gan mosfet and si mosfet in single phase full bridge inverter |
| topic | single-phase full-bridge inverter wide bandgap enhanced GaN MOSFET switching loss gate drive loss |
| url | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.06.010 |
| work_keys_str_mv | AT dengxiaoxiang performancecomparisonbetweenenhancedganmosfetandsimosfetinsinglephasefullbridgeinverter AT lipeng performancecomparisonbetweenenhancedganmosfetandsimosfetinsinglephasefullbridgeinverter AT daichaofan performancecomparisonbetweenenhancedganmosfetandsimosfetinsinglephasefullbridgeinverter AT yangronghao performancecomparisonbetweenenhancedganmosfetandsimosfetinsinglephasefullbridgeinverter |