Optimizing the ITO/MZO/C₂N/CZT heterojunction: a pathway to high-performance photovoltaics

Abstract This study highlights a purpose-driven design and optimization of a C2N-based solar cell structure using the SCAPS-1D solar cell simulator. We investigate the performance characteristics of an ITO/MZO/C2N/CZT heterojunction stack, focusing on optimizing the Magnesium Zinc Oxide (MZO) Electr...

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Main Authors: Pratap Kumar Dakua, Subba Rao Polamuri, P. Meena, P. Purushottam, Shaik Nazeera Begum, S. Elisha Rani, Kumar Neupane
Format: Article
Language:English
Published: Springer 2025-08-01
Series:Discover Electronics
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Online Access:https://doi.org/10.1007/s44291-025-00108-4
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Summary:Abstract This study highlights a purpose-driven design and optimization of a C2N-based solar cell structure using the SCAPS-1D solar cell simulator. We investigate the performance characteristics of an ITO/MZO/C2N/CZT heterojunction stack, focusing on optimizing the Magnesium Zinc Oxide (MZO) Electron Transport Layer (ETL), the C2N absorber, and the CZT Hole Transport Layer/Back Surface Field (HTL/BSF). By systematically varying critical parameters such as ETL thickness, absorber thickness, and doping densities, along with interface characteristics and operating temperature, we engineer a device that achieves a peak simulated power conversion efficiency (PCE) of 32.20%. The optimized configuration yields impressive performance metrics, including Voc = 1.605 V, Jsc = 22.927 mA/cm², and FF = 87.48%. These results highlight the significant impact of meticulous layer engineering, especially with regard to the ETL and BSF, on achieving ultra-high efficiencies in C2N photovoltaics.
ISSN:2948-1600