Performance evaluation and optimization of triple cascode operational transconductance amplifiers using GNRFET technology for low power smart devices
Front-end circuits are crucial interfaces between digital electronics and real-world applications in Internet-of-Things (IoT) systems and portable smart devices, necessitating high-speed, energy-efficient, and compact designs. Advanced mixed-signal processing and actuation technologies are essential...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/adb08d |
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| Summary: | Front-end circuits are crucial interfaces between digital electronics and real-world applications in Internet-of-Things (IoT) systems and portable smart devices, necessitating high-speed, energy-efficient, and compact designs. Advanced mixed-signal processing and actuation technologies are essential for leveraging the pivotal role of analog sensors in Artificial Intelligence (AI) functionalities. This study investigates emerging low-power nanoelectronics for analog circuit applications, focusing on Graphene Nano-ribbon Field-Effect Transistors (GNRFETs), particularly one-dimensional armchair graphene nanoribbons (AGNRs). Triple cascode operational transconductance amplifiers (TCOTAs) are implemented using GNRFETs and MOSFETs at the 32-nanometer technology node using HSPICE. Three distinct GNR-based TCOTA configurations are analyzed against conventional CMOS-based TCOTA to assess performance improvements. The evaluation highlights significant enhancements in GNR-based TCOTAs, particularly in the pure GNRFET-TCOTA variant, which exhibits a notable 33.8% increase in DC gain, a 21.4% improvement in common-mode rejection ratio (CMRR), and substantial growth rates of 5.85 and 8.47 times for slew rate and 3-dB bandwidth, respectively. The pure GNR-based TCOTA shows a 9.4% delay in comparison to Si-CMOS-based TCOTA. Insights into critical design parameters such as dimer lines ( N ), number of GNRs ( n _Rib ), and ribbon spacing ( W _SP ) are provided, emphasizing their impact on circuit performance. This research underscores the potential of GNRFET to optimize operational transconductance amplifiers, enhancing analog circuit capabilities for IoT systems and portable electronics. The findings contribute to advancing nanoelectronics toward achieving higher performance and efficiency in future electronic applications. |
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| ISSN: | 2053-1591 |