Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection
In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles...
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| Format: | Article |
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IEEE
2018-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/8299561/ |
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| _version_ | 1849706938092224512 |
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| author | Antonio Benfante Marco A. Giambra Riccardo Pernice Salvatore Stivala Enrico Calandra Antonino Parisi Alfonso C. Cino Simone Dehm Romain Danneau Ralph Krupke Alessandro C. Busacca |
| author_facet | Antonio Benfante Marco A. Giambra Riccardo Pernice Salvatore Stivala Enrico Calandra Antonino Parisi Alfonso C. Cino Simone Dehm Romain Danneau Ralph Krupke Alessandro C. Busacca |
| author_sort | Antonio Benfante |
| collection | DOAJ |
| description | In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-to-noise ratio dependence on the transistor operating point. |
| format | Article |
| id | doaj-art-0b7da53d4cc54971a4eacb465415dd96 |
| institution | DOAJ |
| issn | 1943-0655 |
| language | English |
| publishDate | 2018-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-0b7da53d4cc54971a4eacb465415dd962025-08-20T03:16:04ZengIEEEIEEE Photonics Journal1943-06552018-01-011021710.1109/JPHOT.2018.28079238299561Employing Microwave Graphene Field Effect Transistors for Infrared Radiation DetectionAntonio Benfante0https://orcid.org/0000-0002-3750-6035Marco A. Giambra1https://orcid.org/0000-0002-1566-2395Riccardo Pernice2https://orcid.org/0000-0002-9992-3221Salvatore Stivala3https://orcid.org/0000-0001-9800-9211Enrico Calandra4https://orcid.org/0000-0002-6292-8635Antonino Parisi5https://orcid.org/0000-0001-9056-4552Alfonso C. Cino6https://orcid.org/0000-0002-8116-3172Simone Dehm7Romain Danneau8Ralph Krupke9Alessandro C. Busacca10Department of Energy, Information engineering and Mathematical models (DEIM), University of Palermo, Palermo, ItalyCNIT – Consorzio Nazionale Interuniversitario per le Telecomunicazioni, Pisa, ItalyDepartment of Energy, Information engineering and Mathematical models (DEIM), University of Palermo, Palermo, ItalyDepartment of Energy, Information engineering and Mathematical models (DEIM), University of Palermo, Palermo, ItalyDepartment of Energy, Information engineering and Mathematical models (DEIM), University of Palermo, Palermo, ItalyDepartment of Energy, Information engineering and Mathematical models (DEIM), University of Palermo, Palermo, ItalyInstitute of Nanotechnology, Karlsruhe Institute of Technology, Karlsruhe, GermanyInstitute of Nanotechnology, Karlsruhe Institute of Technology, Karlsruhe, GermanyInstitute of Nanotechnology, Karlsruhe Institute of Technology, Karlsruhe, GermanyInstitute of Nanotechnology, Karlsruhe Institute of Technology, Karlsruhe 76021, GermanyDepartment of Energy, Information engineering and Mathematical models (DEIM), University of Palermo, Palermo, ItalyIn this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-to-noise ratio dependence on the transistor operating point.https://ieeexplore.ieee.org/document/8299561/Graphenegraphene field effect transistorsinfrared detectorsmicrowave transistors |
| spellingShingle | Antonio Benfante Marco A. Giambra Riccardo Pernice Salvatore Stivala Enrico Calandra Antonino Parisi Alfonso C. Cino Simone Dehm Romain Danneau Ralph Krupke Alessandro C. Busacca Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection IEEE Photonics Journal Graphene graphene field effect transistors infrared detectors microwave transistors |
| title | Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection |
| title_full | Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection |
| title_fullStr | Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection |
| title_full_unstemmed | Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection |
| title_short | Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection |
| title_sort | employing microwave graphene field effect transistors for infrared radiation detection |
| topic | Graphene graphene field effect transistors infrared detectors microwave transistors |
| url | https://ieeexplore.ieee.org/document/8299561/ |
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