Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection

Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection

In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles...

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Bibliographic Details
Main Authors: Antonio Benfante, Marco A. Giambra, Riccardo Pernice, Salvatore Stivala, Enrico Calandra, Antonino Parisi, Alfonso C. Cino, Simone Dehm, Romain Danneau, Ralph Krupke, Alessandro C. Busacca
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Photonics Journal
Subjects:
Graphene
graphene field effect transistors
infrared detectors
microwave transistors
Online Access:https://ieeexplore.ieee.org/document/8299561/
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Summary:In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-to-noise ratio dependence on the transistor operating point.
ISSN:1943-0655

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