Optoelectronic reconfigurable 1T-VSe2/2H-MoTe2 Schottky junction for near-infrared switchable logic
Abstract Reconfigurable devices play a crucial role in the development of silicon semiconductor technology. However, there remains an urgent necessity to develop reconfigurable devices that are simpler to manufacture and provide a broader range of functions. Herein, we have fabricated an all-two-dim...
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Nature Portfolio
2025-06-01
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| Series: | Communications Materials |
| Online Access: | https://doi.org/10.1038/s43246-025-00844-w |
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| author | Qiman Zhang Yue Cheng Shaoguang Zhao Jingwen Zhao Ziheng Zhao Li Tao |
| author_facet | Qiman Zhang Yue Cheng Shaoguang Zhao Jingwen Zhao Ziheng Zhao Li Tao |
| author_sort | Qiman Zhang |
| collection | DOAJ |
| description | Abstract Reconfigurable devices play a crucial role in the development of silicon semiconductor technology. However, there remains an urgent necessity to develop reconfigurable devices that are simpler to manufacture and provide a broader range of functions. Herein, we have fabricated an all-two-dimensional (2D) reconfigurable Schottky junction by artificially stacking metallic 1T phase VSe2 and semiconducting 2H phase MoTe2. Leveraging the adjustment of band bending of the ambipolar material MoTe2 by gate voltage, the device achieved reversibly switchable carrier polarity type and gate-tunable rectification ratio ranging from 102 to 10−3. Correspondingly, the device shows obvious bidirectional photoresponse by changing gate voltage from −60 V to 60 V under 1064 nm illumination. Based on its excellent switchable photoresponse, we have constructed an optoelectronic logic device that can achieve photoelectric logic function switching. This work indicates the important role of all-2D Schottky junctions in reconfigurable logic optoelectronic devices. |
| format | Article |
| id | doaj-art-0b73f4e0c9234ecda3c4bc488f9f6291 |
| institution | DOAJ |
| issn | 2662-4443 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Communications Materials |
| spelling | doaj-art-0b73f4e0c9234ecda3c4bc488f9f62912025-08-20T03:21:06ZengNature PortfolioCommunications Materials2662-44432025-06-01611810.1038/s43246-025-00844-wOptoelectronic reconfigurable 1T-VSe2/2H-MoTe2 Schottky junction for near-infrared switchable logicQiman Zhang0Yue Cheng1Shaoguang Zhao2Jingwen Zhao3Ziheng Zhao4Li Tao5Center for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, and Center for Interdisciplinary Science of Optical Quantum and NEMS Integration, Beijing Institute of TechnologyCenter for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, and Center for Interdisciplinary Science of Optical Quantum and NEMS Integration, Beijing Institute of TechnologyCenter for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, and Center for Interdisciplinary Science of Optical Quantum and NEMS Integration, Beijing Institute of TechnologyCenter for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, and Center for Interdisciplinary Science of Optical Quantum and NEMS Integration, Beijing Institute of TechnologyCenter for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, and Center for Interdisciplinary Science of Optical Quantum and NEMS Integration, Beijing Institute of TechnologyCenter for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, and Center for Interdisciplinary Science of Optical Quantum and NEMS Integration, Beijing Institute of TechnologyAbstract Reconfigurable devices play a crucial role in the development of silicon semiconductor technology. However, there remains an urgent necessity to develop reconfigurable devices that are simpler to manufacture and provide a broader range of functions. Herein, we have fabricated an all-two-dimensional (2D) reconfigurable Schottky junction by artificially stacking metallic 1T phase VSe2 and semiconducting 2H phase MoTe2. Leveraging the adjustment of band bending of the ambipolar material MoTe2 by gate voltage, the device achieved reversibly switchable carrier polarity type and gate-tunable rectification ratio ranging from 102 to 10−3. Correspondingly, the device shows obvious bidirectional photoresponse by changing gate voltage from −60 V to 60 V under 1064 nm illumination. Based on its excellent switchable photoresponse, we have constructed an optoelectronic logic device that can achieve photoelectric logic function switching. This work indicates the important role of all-2D Schottky junctions in reconfigurable logic optoelectronic devices.https://doi.org/10.1038/s43246-025-00844-w |
| spellingShingle | Qiman Zhang Yue Cheng Shaoguang Zhao Jingwen Zhao Ziheng Zhao Li Tao Optoelectronic reconfigurable 1T-VSe2/2H-MoTe2 Schottky junction for near-infrared switchable logic Communications Materials |
| title | Optoelectronic reconfigurable 1T-VSe2/2H-MoTe2 Schottky junction for near-infrared switchable logic |
| title_full | Optoelectronic reconfigurable 1T-VSe2/2H-MoTe2 Schottky junction for near-infrared switchable logic |
| title_fullStr | Optoelectronic reconfigurable 1T-VSe2/2H-MoTe2 Schottky junction for near-infrared switchable logic |
| title_full_unstemmed | Optoelectronic reconfigurable 1T-VSe2/2H-MoTe2 Schottky junction for near-infrared switchable logic |
| title_short | Optoelectronic reconfigurable 1T-VSe2/2H-MoTe2 Schottky junction for near-infrared switchable logic |
| title_sort | optoelectronic reconfigurable 1t vse2 2h mote2 schottky junction for near infrared switchable logic |
| url | https://doi.org/10.1038/s43246-025-00844-w |
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