Oxide semiconductor based deep‐subthreshold operated read‐out electronics for all‐printed smart sensor patches
Abstract The ability to fabricate an entire smart sensor patch with read‐out electronics using commercial printing techniques may have a wide range of potential applications. Although solution‐processed oxide thin film transistors (TFTs) are capable of providing high mobility electron transport, res...
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| Format: | Article |
| Language: | English |
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Wiley
2025-02-01
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| Series: | Exploration |
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| Online Access: | https://doi.org/10.1002/EXP.20230167 |
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| author | Jyoti Ranjan Pradhan Sushree Sangita Priyadarsini Sanjana R. Nibgoor Manvendra Singh Subho Dasgupta |
| author_facet | Jyoti Ranjan Pradhan Sushree Sangita Priyadarsini Sanjana R. Nibgoor Manvendra Singh Subho Dasgupta |
| author_sort | Jyoti Ranjan Pradhan |
| collection | DOAJ |
| description | Abstract The ability to fabricate an entire smart sensor patch with read‐out electronics using commercial printing techniques may have a wide range of potential applications. Although solution‐processed oxide thin film transistors (TFTs) are capable of providing high mobility electron transport, resulting in large ON‐state current and power output, there is hardly any literature report that uses the printed oxide TFTs at the sensor interfaces. Here, printed amorphous indium‐gallium‐zinc oxide (a‐IGZO)‐based deep‐subthreshold operated TFTs that comprise signal amplifiers and analog‐to‐digital converters (ADCs) that can successfully digitalize the analog sensor signals up to a frequency range of 1 kHz are reported. In addition, exploiting the high current oxide TFTs, a current drive circuit placed after the ADC unit has been found useful in producing easy‐to‐detect visual recognition of the sensor signal at a predefined threshold crossover. Notably, the entire smart sensor patch is demonstrated to operate at a low supply voltage of ≤2 V, thereby ensuring that it can be an on‐chip energy source compatible and standalone detection unit. |
| format | Article |
| id | doaj-art-0b2aaf135a5646d3979079d01c07e5e3 |
| institution | OA Journals |
| issn | 2766-8509 2766-2098 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley |
| record_format | Article |
| series | Exploration |
| spelling | doaj-art-0b2aaf135a5646d3979079d01c07e5e32025-08-20T02:11:17ZengWileyExploration2766-85092766-20982025-02-0151n/an/a10.1002/EXP.20230167Oxide semiconductor based deep‐subthreshold operated read‐out electronics for all‐printed smart sensor patchesJyoti Ranjan Pradhan0Sushree Sangita Priyadarsini1Sanjana R. Nibgoor2Manvendra Singh3Subho Dasgupta4Department of Materials Engineering Indian Institute of Science (IISc) Bangalore Karnataka IndiaDepartment of Materials Engineering Indian Institute of Science (IISc) Bangalore Karnataka IndiaDepartment of Materials Engineering Indian Institute of Science (IISc) Bangalore Karnataka IndiaDepartment of Materials Engineering Indian Institute of Science (IISc) Bangalore Karnataka IndiaDepartment of Materials Engineering Indian Institute of Science (IISc) Bangalore Karnataka IndiaAbstract The ability to fabricate an entire smart sensor patch with read‐out electronics using commercial printing techniques may have a wide range of potential applications. Although solution‐processed oxide thin film transistors (TFTs) are capable of providing high mobility electron transport, resulting in large ON‐state current and power output, there is hardly any literature report that uses the printed oxide TFTs at the sensor interfaces. Here, printed amorphous indium‐gallium‐zinc oxide (a‐IGZO)‐based deep‐subthreshold operated TFTs that comprise signal amplifiers and analog‐to‐digital converters (ADCs) that can successfully digitalize the analog sensor signals up to a frequency range of 1 kHz are reported. In addition, exploiting the high current oxide TFTs, a current drive circuit placed after the ADC unit has been found useful in producing easy‐to‐detect visual recognition of the sensor signal at a predefined threshold crossover. Notably, the entire smart sensor patch is demonstrated to operate at a low supply voltage of ≤2 V, thereby ensuring that it can be an on‐chip energy source compatible and standalone detection unit.https://doi.org/10.1002/EXP.20230167analog‐to‐digital converterinkjet printingprinted oxide electronicsprinted read‐out electronicssmart sensor patchesthin film transistors |
| spellingShingle | Jyoti Ranjan Pradhan Sushree Sangita Priyadarsini Sanjana R. Nibgoor Manvendra Singh Subho Dasgupta Oxide semiconductor based deep‐subthreshold operated read‐out electronics for all‐printed smart sensor patches Exploration analog‐to‐digital converter inkjet printing printed oxide electronics printed read‐out electronics smart sensor patches thin film transistors |
| title | Oxide semiconductor based deep‐subthreshold operated read‐out electronics for all‐printed smart sensor patches |
| title_full | Oxide semiconductor based deep‐subthreshold operated read‐out electronics for all‐printed smart sensor patches |
| title_fullStr | Oxide semiconductor based deep‐subthreshold operated read‐out electronics for all‐printed smart sensor patches |
| title_full_unstemmed | Oxide semiconductor based deep‐subthreshold operated read‐out electronics for all‐printed smart sensor patches |
| title_short | Oxide semiconductor based deep‐subthreshold operated read‐out electronics for all‐printed smart sensor patches |
| title_sort | oxide semiconductor based deep subthreshold operated read out electronics for all printed smart sensor patches |
| topic | analog‐to‐digital converter inkjet printing printed oxide electronics printed read‐out electronics smart sensor patches thin film transistors |
| url | https://doi.org/10.1002/EXP.20230167 |
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