Development of High Temperature Oxidation Technology for SiC and Analysis on the Characteristics of its Interface
It used n-type 4° off-axis 4H-SiC (0001) substrates to form SiO2 layers by thermal oxidation in the condition of 1 200 ℃, 1 250 ℃, 1 300 ℃as well as 1 350 ℃, and analyzed the SiO2/SiC interface via the C-V and I-V characteristics of MOS capacitor structure. The results show that the interface state...
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Editorial Office of Control and Information Technology
2015-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
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| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.01.008 |
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| _version_ | 1849224697992970240 |
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| author | ZHAO Yanli LI Chengzhan JIANG Huaping XUN Hengyu |
| author_facet | ZHAO Yanli LI Chengzhan JIANG Huaping XUN Hengyu |
| author_sort | ZHAO Yanli |
| collection | DOAJ |
| description | It used n-type 4° off-axis 4H-SiC (0001) substrates to form SiO2 layers by thermal oxidation in the condition of 1 200 ℃, 1 250 ℃, 1 300 ℃as well as 1 350 ℃, and analyzed the SiO2/SiC interface via the C-V and I-V characteristics of MOS capacitor structure. The results show that the interface state density close to the conduction band edge is reduced as the SiO2 layer oxidized at 1 350 ℃, which is useful for SiO2 layers grown at 1 350 ℃. In addition, the breakdown electrical field is tested above 6 MV/cm, which can meet SiC MOSFET working requirements while temperature is below 1 300 ℃. |
| format | Article |
| id | doaj-art-0b2a296b46924613a5eb5ccd0d0d0237 |
| institution | Kabale University |
| issn | 2096-5427 |
| language | zho |
| publishDate | 2015-01-01 |
| publisher | Editorial Office of Control and Information Technology |
| record_format | Article |
| series | Kongzhi Yu Xinxi Jishu |
| spelling | doaj-art-0b2a296b46924613a5eb5ccd0d0d02372025-08-25T06:54:27ZzhoEditorial Office of Control and Information TechnologyKongzhi Yu Xinxi Jishu2096-54272015-01-01363882327990Development of High Temperature Oxidation Technology for SiC and Analysis on the Characteristics of its InterfaceZHAO YanliLI ChengzhanJIANG HuapingXUN HengyuIt used n-type 4° off-axis 4H-SiC (0001) substrates to form SiO2 layers by thermal oxidation in the condition of 1 200 ℃, 1 250 ℃, 1 300 ℃as well as 1 350 ℃, and analyzed the SiO2/SiC interface via the C-V and I-V characteristics of MOS capacitor structure. The results show that the interface state density close to the conduction band edge is reduced as the SiO2 layer oxidized at 1 350 ℃, which is useful for SiO2 layers grown at 1 350 ℃. In addition, the breakdown electrical field is tested above 6 MV/cm, which can meet SiC MOSFET working requirements while temperature is below 1 300 ℃.http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.01.008SiC oxidation processinterface state densitybreakdown electrical fieldC-V characteristicI-V characteristic |
| spellingShingle | ZHAO Yanli LI Chengzhan JIANG Huaping XUN Hengyu Development of High Temperature Oxidation Technology for SiC and Analysis on the Characteristics of its Interface Kongzhi Yu Xinxi Jishu SiC oxidation process interface state density breakdown electrical field C-V characteristic I-V characteristic |
| title | Development of High Temperature Oxidation Technology for SiC and Analysis on the Characteristics of its Interface |
| title_full | Development of High Temperature Oxidation Technology for SiC and Analysis on the Characteristics of its Interface |
| title_fullStr | Development of High Temperature Oxidation Technology for SiC and Analysis on the Characteristics of its Interface |
| title_full_unstemmed | Development of High Temperature Oxidation Technology for SiC and Analysis on the Characteristics of its Interface |
| title_short | Development of High Temperature Oxidation Technology for SiC and Analysis on the Characteristics of its Interface |
| title_sort | development of high temperature oxidation technology for sic and analysis on the characteristics of its interface |
| topic | SiC oxidation process interface state density breakdown electrical field C-V characteristic I-V characteristic |
| url | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.01.008 |
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