Development of High Temperature Oxidation Technology for SiC and Analysis on the Characteristics of its Interface
It used n-type 4° off-axis 4H-SiC (0001) substrates to form SiO2 layers by thermal oxidation in the condition of 1 200 ℃, 1 250 ℃, 1 300 ℃as well as 1 350 ℃, and analyzed the SiO2/SiC interface via the C-V and I-V characteristics of MOS capacitor structure. The results show that the interface state...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2015-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.01.008 |
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| Summary: | It used n-type 4° off-axis 4H-SiC (0001) substrates to form SiO2 layers by thermal oxidation in the condition of 1 200 ℃, 1 250 ℃, 1 300 ℃as well as 1 350 ℃, and analyzed the SiO2/SiC interface via the C-V and I-V characteristics of MOS capacitor structure. The results show that the interface state density close to the conduction band edge is reduced as the SiO2 layer oxidized at 1 350 ℃, which is useful for SiO2 layers grown at 1 350 ℃. In addition, the breakdown electrical field is tested above 6 MV/cm, which can meet SiC MOSFET working requirements while temperature is below 1 300 ℃. |
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| ISSN: | 2096-5427 |