Reliable Multistate RRAM Devices for Reconfigurable CAM and IMC Applications

Reliable Multistate RRAM Devices for Reconfigurable CAM and IMC Applications

This work presents a reliable multistate RRAM device based on a Cu/Ta2O5/WO<inline-formula> <tex-math notation="LaTeX">${}_{\text {3-x}}$ </tex-math></inline-formula>/Pt structure, utilizing fully CMOS-compatible materials. The device demonstrates four distinct resi...

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Bibliographic Details
Main Authors: Shengpeng Xing, Zijian Wang, Zhen Wang, Pengtao Li, Xuemeng Fan, Ziyang Zhang, Guobin Zhang, Jianhao Kan, Qi Luo, Shuai Zhong, Yishu Zhang
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
RRAM
multistate
reconfigurable memory
content-addressable memory
in-memory computing
Online Access:https://ieeexplore.ieee.org/document/10969850/
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