INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY

INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY

The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented. The specific features of the functioning of various constructive solutions IGBT a...

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Bibliographic Details
Main Authors:	S. Ibrahim, I. Yu. Lovshenko, V. R. Stempitsky
Format:	Article
Language:	Russian
Published:	Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:	Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:	isolated gate bipolar transistor structure manufacturing technology static and dynamic characteristics
Online Access:	https://doklady.bsuir.by/jour/article/view/822
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