Systematic investigation of AlGaN channels on AlN/sapphire substrates using metal–organic chemical vapor deposition (MOCVD): Toward higher crystallinity and lower surface roughness
Aluminum nitride (AlN) stands out as a wide bandgap semiconductor due to its exceptional combination of high thermal conductivity and high electrical resistivity, a rare pairing that makes it uniquely suited for advanced electronic applications. In addition, its unique ability to support the growth...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0259002 |
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