Intense violet electroluminescence of thin SiO2 layers with SnO2 nanocrystals
It has been shown that Sn implantation with subsequent annealing in air leads to an increase in the electroluminescence (EL) intensity of SiO2/Si structure by two orders of magnitude. Intense violet EL with a maximum at 3.21 eV was observed at room temperature by the naked eye at forward bias. The...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-12-01
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| Series: | Results in Optics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666950124001470 |
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