Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise

Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise

In Part II of this article we discuss the impact of a discrete treatment of traps on 3-D NAND Flash random telegraph noise (RTN). A higher RTN results when discrete traps are taken into account, that can only be explained by a stronger influence of the discrete charged traps on the current conductio...

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Bibliographic Details
Main Authors: Gerardo Malavena, Salvatore M. Amoroso, Andrew R. Brown, Plamen Asenov, Xi-Wei Lin, Victor Moroz, Mattia Giulianini, David Refaldi, Christian Monzio Compagnoni, Alessandro S. Spinelli
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
3-DNAND Flash memories
variability
random telegraph noise
discrete traps
Online Access:https://ieeexplore.ieee.org/document/10643403/
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