Formation and structural studies of integrated membranes based on channel silicon
A method for obtaining structures for integrated membranes based on channel silicon is proposed. In this work features of the formation of through channels in electronic silicon are considered depending on the composition of the electrolyte, the concentration of charge carriers and anode etching...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2018-07-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2018/3%20(159)/59-63%20%D0%91%D0%BE%D0%BB%D0%BE%D1%82%D0%BE%D0%B2%20%D0%92.%20%D0%92.,%20%D0%98%D0%B2%D0%BB%D0%B5%D0%B2%20%D0%9A.%20%D0%95.,%20%D0%9A%D0%BD%D1%8F%D0%B7%D0%B5%D0%B2%20%D0%95.%20%D0%92.,%20%D0%9F%D0%BE%D0%BD%D0%BE%D0%BC%D0%B0%D1%80%D0%B5%D0%B2%D0%B0%20%D0%98.%20%D0%92..pdf |
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| Summary: | A method for obtaining structures for integrated membranes
based on channel silicon is proposed. In this work features of the
formation of through channels in electronic silicon are considered
depending on the composition of the electrolyte, the concentration
of charge carriers and anode etching regimes. It is shown that
porous structures in the form of «bottlenecks» are formed under
the used regimes. It has been established that in the electrolyte
based on HF: C3
H7
OH, to obtain porous layers with a thickness of
more than 100 μm, it is necessary to interrupt the anodic etching
process, which is due to the feature of pore formation. For the
electrolyte based on HF: (CH3
)2CO, the duration of etching may
be longer, which is associated with a higher solubility of hydrogen
in acetone than isopropanol. The average pore diameter in this
electrolyte grows more slowly with depth compared to the use
of the HF: C3
H7
OH electrolyte. This effect can be explained by
facilitating diffusion in the structures of not only hydrogen but
also fluoride ions. |
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| ISSN: | 1813-8225 2541-7541 |