A Review of Ku-Band GaN HEMT Power Amplifiers Development

A Review of Ku-Band GaN HEMT Power Amplifiers Development

This review article investigates the current status and advances in Ku-band gallium nitride (GaN) high-electron mobility transistor (HEMT) high-power amplifiers (HPAs), which are critical for satellite communications, unmanned aerial vehicle (UAV) systems, and military radar applications. The demand...

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Bibliographic Details
Main Author:	Jihoon Kim
Format:	Article
Language:	English
Published:	MDPI AG 2024-11-01
Series:	Micromachines
Subjects:	Ku-band GaN HEMT high-power amplifier satellite communications MMIC IM-PAM
Online Access:	https://www.mdpi.com/2072-666X/15/11/1381
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