Low Temperature Electrical Resistivity Studies in Lead Thin Films
Thin lead films of thickness, 100 nm, 150 nm, 200 nm and 250 nm have been deposited using electron beam evaporation technique at room temperature onto glass substrates under high vacuum conditions. Films were investigated for electrical resistivity at low temperatures from 77 K to 300 K. Resistivity...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2013-07-01
|
| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2013/3/articles/jnep_2013_V5_03026.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850231889372119040 |
|---|---|
| author | A.W. Manjunath T. Sankarappa R. Ramanna J.S. Ashwajeet T. Sujatha P. Sarvanan |
| author_facet | A.W. Manjunath T. Sankarappa R. Ramanna J.S. Ashwajeet T. Sujatha P. Sarvanan |
| author_sort | A.W. Manjunath |
| collection | DOAJ |
| description | Thin lead films of thickness, 100 nm, 150 nm, 200 nm and 250 nm have been deposited using electron beam evaporation technique at room temperature onto glass substrates under high vacuum conditions. Films were investigated for electrical resistivity at low temperatures from 77 K to 300 K. Resistivity variation with temperature indicates transition from metallic to semiconductor behavior. Transition tem-perature increased with increasing film thickness. Temperature coefficient of resistance in the metallic re-gion has been determined for all the four films. Using Arrhenius relation, activation energy for conduction in metallic region has been determined. Mott’s small polaron hopping model has been employed to deter-mine activation energy in the semiconducting region. In a film of 250 nm thick, deviation from Mott’s small polaron hopping model for below 100 K was noted and that has been considered under Mott’s variable range hopping model. The complete understanding of electrical properties of Pb films has been necessitat-ed by the fact that the band gap in CdS decreases when Pb is incorporated into it, which in turn can be used to fabricated large efficient solar cells. It is for the first time that lead films of the present thickness have been investigated for low temperature resistivity. |
| format | Article |
| id | doaj-art-09322c4da4f4460484b6d68dfecff304 |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2013-07-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-09322c4da4f4460484b6d68dfecff3042025-08-20T02:03:23ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722013-07-015303026-103026-3Low Temperature Electrical Resistivity Studies in Lead Thin FilmsA.W. Manjunath0T. Sankarappa1R. Ramanna2J.S. Ashwajeet3T. Sujatha4P. Sarvanan5Department of Physics, Gulbarga University, Gulbarga, Gulbarga 585 106, IndiaDepartment of Physics, Gulbarga University, Gulbarga, Gulbarga 585 106, IndiaDepartment of Physics, Gulbarga University, Gulbarga, Gulbarga 585 106, IndiaDepartment of Physics, Gulbarga University, Gulbarga, Gulbarga 585 106, IndiaH.P.S. Kalkhora, Basavakalyan (Tq), Bidar (Dt), IndiaDefence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, IndiaThin lead films of thickness, 100 nm, 150 nm, 200 nm and 250 nm have been deposited using electron beam evaporation technique at room temperature onto glass substrates under high vacuum conditions. Films were investigated for electrical resistivity at low temperatures from 77 K to 300 K. Resistivity variation with temperature indicates transition from metallic to semiconductor behavior. Transition tem-perature increased with increasing film thickness. Temperature coefficient of resistance in the metallic re-gion has been determined for all the four films. Using Arrhenius relation, activation energy for conduction in metallic region has been determined. Mott’s small polaron hopping model has been employed to deter-mine activation energy in the semiconducting region. In a film of 250 nm thick, deviation from Mott’s small polaron hopping model for below 100 K was noted and that has been considered under Mott’s variable range hopping model. The complete understanding of electrical properties of Pb films has been necessitat-ed by the fact that the band gap in CdS decreases when Pb is incorporated into it, which in turn can be used to fabricated large efficient solar cells. It is for the first time that lead films of the present thickness have been investigated for low temperature resistivity.http://jnep.sumdu.edu.ua/download/numbers/2013/3/articles/jnep_2013_V5_03026.pdfThin filmsElectrical resistivityMetal-semiconductor transitionHopping mechanis |
| spellingShingle | A.W. Manjunath T. Sankarappa R. Ramanna J.S. Ashwajeet T. Sujatha P. Sarvanan Low Temperature Electrical Resistivity Studies in Lead Thin Films Журнал нано- та електронної фізики Thin films Electrical resistivity Metal-semiconductor transition Hopping mechanis |
| title | Low Temperature Electrical Resistivity Studies in Lead Thin Films |
| title_full | Low Temperature Electrical Resistivity Studies in Lead Thin Films |
| title_fullStr | Low Temperature Electrical Resistivity Studies in Lead Thin Films |
| title_full_unstemmed | Low Temperature Electrical Resistivity Studies in Lead Thin Films |
| title_short | Low Temperature Electrical Resistivity Studies in Lead Thin Films |
| title_sort | low temperature electrical resistivity studies in lead thin films |
| topic | Thin films Electrical resistivity Metal-semiconductor transition Hopping mechanis |
| url | http://jnep.sumdu.edu.ua/download/numbers/2013/3/articles/jnep_2013_V5_03026.pdf |
| work_keys_str_mv | AT awmanjunath lowtemperatureelectricalresistivitystudiesinleadthinfilms AT tsankarappa lowtemperatureelectricalresistivitystudiesinleadthinfilms AT rramanna lowtemperatureelectricalresistivitystudiesinleadthinfilms AT jsashwajeet lowtemperatureelectricalresistivitystudiesinleadthinfilms AT tsujatha lowtemperatureelectricalresistivitystudiesinleadthinfilms AT psarvanan lowtemperatureelectricalresistivitystudiesinleadthinfilms |