Fabrication of vertical gallium oxide PN diodes using homoepitaxial growth by MOCVD and ion implantation technology
The exceptional properties of wide-bandgap semiconductor β-Ga2O3 position it as a leading candidate for next-generation high-power and high-frequency electronic devices. In this work, we successfully fabricated high-performance vertical p-n junction diodes using homoepitaxial β-Ga2O3 grown on Sn-dop...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-03-01
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| Series: | Materials Today Advances |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S259004982500013X |
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