Fabrication of vertical gallium oxide PN diodes using homoepitaxial growth by MOCVD and ion implantation technology
The exceptional properties of wide-bandgap semiconductor β-Ga2O3 position it as a leading candidate for next-generation high-power and high-frequency electronic devices. In this work, we successfully fabricated high-performance vertical p-n junction diodes using homoepitaxial β-Ga2O3 grown on Sn-dop...
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Elsevier
2025-03-01
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| Series: | Materials Today Advances |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S259004982500013X |
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| author | Chih-Yang Huang Xin-Ying Tsai Fu-Gow Tarntair Anoop Kumar Singh Shao-Hui Hsu Dong-Sing Wuu Kenneth Järrendahl Ching-Lien Hsiao Ray-Hua Horng |
| author_facet | Chih-Yang Huang Xin-Ying Tsai Fu-Gow Tarntair Anoop Kumar Singh Shao-Hui Hsu Dong-Sing Wuu Kenneth Järrendahl Ching-Lien Hsiao Ray-Hua Horng |
| author_sort | Chih-Yang Huang |
| collection | DOAJ |
| description | The exceptional properties of wide-bandgap semiconductor β-Ga2O3 position it as a leading candidate for next-generation high-power and high-frequency electronic devices. In this work, we successfully fabricated high-performance vertical p-n junction diodes using homoepitaxial β-Ga2O3 grown on Sn-doped β-Ga2O3 substrates with a (010) orientation. A 600 nm thick undoped β-Ga2O3 epitaxial layer was grown by metalorganic chemical vapor deposition at 875 °C. Phosphorus ions were implanted at energies of 40–200 keV and doses ranging from 1 × 1013 to 1.6 × 1014 ions/cm2 to achieve p-type doping. The rapid thermal annealing at 1100 °C for 10 s activated the dopants, enabling p-type conductivity. Ni/Au and Ti/Al/Ni/Au ohmic contacts were deposited on the p-type β-Ga2O3 epitaxial layer and n-type substrate, respectively, to form vertical p-n junctions. The fabricated diodes demonstrated a forward voltage of 1 V (@ 10 A/cm2), a specific on-resistance of 1.271 mΩ cm2, and an impressive on/off current ratio of 1.52 × 107, with an ideality factor of 1.477. The diodes showed excellent stability and robustness in temperature-dependent and pulse current density-voltage measurements This work represents a significant advance in p-type β-Ga2O3 technology, demonstrating its viability for future power electronics and semiconductor devices. |
| format | Article |
| id | doaj-art-0919abb87e2b4a82bcdac03326cbb2a4 |
| institution | OA Journals |
| issn | 2590-0498 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Materials Today Advances |
| spelling | doaj-art-0919abb87e2b4a82bcdac03326cbb2a42025-08-20T02:06:20ZengElsevierMaterials Today Advances2590-04982025-03-012510056810.1016/j.mtadv.2025.100568Fabrication of vertical gallium oxide PN diodes using homoepitaxial growth by MOCVD and ion implantation technologyChih-Yang Huang0Xin-Ying Tsai1Fu-Gow Tarntair2Anoop Kumar Singh3Shao-Hui Hsu4Dong-Sing Wuu5Kenneth Järrendahl6Ching-Lien Hsiao7Ray-Hua Horng8Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu, 30010, TaiwanInstitute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu, 30010, TaiwanInstitute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu, 30010, TaiwanDepartment of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou, 54561, TaiwanTaiwan Semiconductor Research Institute (TSRI), National Applied Research Laboratories, Hsinchu, 30091, TaiwanDepartment of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou, 54561, TaiwanThin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83, Linköping, SwedenThin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83, Linköping, SwedenInstitute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan; Corresponding author. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.The exceptional properties of wide-bandgap semiconductor β-Ga2O3 position it as a leading candidate for next-generation high-power and high-frequency electronic devices. In this work, we successfully fabricated high-performance vertical p-n junction diodes using homoepitaxial β-Ga2O3 grown on Sn-doped β-Ga2O3 substrates with a (010) orientation. A 600 nm thick undoped β-Ga2O3 epitaxial layer was grown by metalorganic chemical vapor deposition at 875 °C. Phosphorus ions were implanted at energies of 40–200 keV and doses ranging from 1 × 1013 to 1.6 × 1014 ions/cm2 to achieve p-type doping. The rapid thermal annealing at 1100 °C for 10 s activated the dopants, enabling p-type conductivity. Ni/Au and Ti/Al/Ni/Au ohmic contacts were deposited on the p-type β-Ga2O3 epitaxial layer and n-type substrate, respectively, to form vertical p-n junctions. The fabricated diodes demonstrated a forward voltage of 1 V (@ 10 A/cm2), a specific on-resistance of 1.271 mΩ cm2, and an impressive on/off current ratio of 1.52 × 107, with an ideality factor of 1.477. The diodes showed excellent stability and robustness in temperature-dependent and pulse current density-voltage measurements This work represents a significant advance in p-type β-Ga2O3 technology, demonstrating its viability for future power electronics and semiconductor devices.http://www.sciencedirect.com/science/article/pii/S259004982500013XHomoepitaxial growthIon implantationMetalorganic chemical vapor depositionp-type β-Ga2O3p-n junctions |
| spellingShingle | Chih-Yang Huang Xin-Ying Tsai Fu-Gow Tarntair Anoop Kumar Singh Shao-Hui Hsu Dong-Sing Wuu Kenneth Järrendahl Ching-Lien Hsiao Ray-Hua Horng Fabrication of vertical gallium oxide PN diodes using homoepitaxial growth by MOCVD and ion implantation technology Materials Today Advances Homoepitaxial growth Ion implantation Metalorganic chemical vapor deposition p-type β-Ga2O3 p-n junctions |
| title | Fabrication of vertical gallium oxide PN diodes using homoepitaxial growth by MOCVD and ion implantation technology |
| title_full | Fabrication of vertical gallium oxide PN diodes using homoepitaxial growth by MOCVD and ion implantation technology |
| title_fullStr | Fabrication of vertical gallium oxide PN diodes using homoepitaxial growth by MOCVD and ion implantation technology |
| title_full_unstemmed | Fabrication of vertical gallium oxide PN diodes using homoepitaxial growth by MOCVD and ion implantation technology |
| title_short | Fabrication of vertical gallium oxide PN diodes using homoepitaxial growth by MOCVD and ion implantation technology |
| title_sort | fabrication of vertical gallium oxide pn diodes using homoepitaxial growth by mocvd and ion implantation technology |
| topic | Homoepitaxial growth Ion implantation Metalorganic chemical vapor deposition p-type β-Ga2O3 p-n junctions |
| url | http://www.sciencedirect.com/science/article/pii/S259004982500013X |
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