Fabrication of vertical gallium oxide PN diodes using homoepitaxial growth by MOCVD and ion implantation technology
The exceptional properties of wide-bandgap semiconductor β-Ga2O3 position it as a leading candidate for next-generation high-power and high-frequency electronic devices. In this work, we successfully fabricated high-performance vertical p-n junction diodes using homoepitaxial β-Ga2O3 grown on Sn-dop...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-03-01
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| Series: | Materials Today Advances |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S259004982500013X |
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| Summary: | The exceptional properties of wide-bandgap semiconductor β-Ga2O3 position it as a leading candidate for next-generation high-power and high-frequency electronic devices. In this work, we successfully fabricated high-performance vertical p-n junction diodes using homoepitaxial β-Ga2O3 grown on Sn-doped β-Ga2O3 substrates with a (010) orientation. A 600 nm thick undoped β-Ga2O3 epitaxial layer was grown by metalorganic chemical vapor deposition at 875 °C. Phosphorus ions were implanted at energies of 40–200 keV and doses ranging from 1 × 1013 to 1.6 × 1014 ions/cm2 to achieve p-type doping. The rapid thermal annealing at 1100 °C for 10 s activated the dopants, enabling p-type conductivity. Ni/Au and Ti/Al/Ni/Au ohmic contacts were deposited on the p-type β-Ga2O3 epitaxial layer and n-type substrate, respectively, to form vertical p-n junctions. The fabricated diodes demonstrated a forward voltage of 1 V (@ 10 A/cm2), a specific on-resistance of 1.271 mΩ cm2, and an impressive on/off current ratio of 1.52 × 107, with an ideality factor of 1.477. The diodes showed excellent stability and robustness in temperature-dependent and pulse current density-voltage measurements This work represents a significant advance in p-type β-Ga2O3 technology, demonstrating its viability for future power electronics and semiconductor devices. |
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| ISSN: | 2590-0498 |