MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES

MoS<sub>2</sub> BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES

The electron energy band gap in one monomolecular layer of molybdenum dichalcogenide MoS2 is reduced upon substitution of S atoms by Te ones from 1,84 to 1,17 eV in the case of MoTe2. Both MoTe2 and MoS2 compounds in a bulk phase are indirect-gap semiconductors while one monomolecular layer of MoS2-...

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Bibliographic Details
Main Authors: A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
molybdenum disulfide
monolayer
electronic structure
band gap
Online Access:https://doklady.bsuir.by/jour/article/view/676
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