Study on Single-Event Transient Hardness of Semi-Enclosed Gate NMOS

Study on Single-Event Transient Hardness of Semi-Enclosed Gate NMOS

Based on the simulation software, single-event transient (SET) simulations were conducted on semi-enclosed gate NMOS devices. The simulation involved bombarding the semi-enclosed gate NMOS devices with heavy ions under specific conditions. A comparative analysis was conducted to evaluate the single-...

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Bibliographic Details
Main Authors: Zhuoxiang Wang, Gang Li, Minghua Tang
Format: Article
Language:English
Published: MDPI AG 2025-04-01
Series:Applied Sciences
Subjects:
TCAD
semi-enclosed
NMOS
SET
Online Access:https://www.mdpi.com/2076-3417/15/7/4023
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