Study on Single-Event Transient Hardness of Semi-Enclosed Gate NMOS
Based on the simulation software, single-event transient (SET) simulations were conducted on semi-enclosed gate NMOS devices. The simulation involved bombarding the semi-enclosed gate NMOS devices with heavy ions under specific conditions. A comparative analysis was conducted to evaluate the single-...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-04-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/15/7/4023 |
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| Summary: | Based on the simulation software, single-event transient (SET) simulations were conducted on semi-enclosed gate NMOS devices. The simulation involved bombarding the semi-enclosed gate NMOS devices with heavy ions under specific conditions. A comparative analysis was conducted to evaluate the single-event transient tolerance of traditional NMOS and semi-enclosed gate NMOS. Simulation curves from transient to steady-state states under different Linear Energy Transfer (LET) values, as well as potential distribution and current density distribution maps following heavy ion bombardment, were analyzed. Furthermore, single-event transient simulations were carried out on inverters composed of both NMOS types, with subsequent analysis. The results ultimately demonstrate that the semi-enclosed gate NMOS exhibits superior single-event transient tolerance compared to conventional NMOS. |
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| ISSN: | 2076-3417 |