Processing Chip for Thin Film Bulk Acoustic Resonator Mass Sensor
Aimed at portable application, a new integrated process chip for thin film bulk acoustic resonator (FBAR) mass sensor is proposed and verified with 0.18 um CMOS processing in this paper. The longitudinal mode FBAR with back-etched structure is fabricated, which has resonant frequency 1.878 GHz and...
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Format: | Article |
Language: | English |
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Wiley
2012-01-01
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Series: | Journal of Control Science and Engineering |
Online Access: | http://dx.doi.org/10.1155/2012/923617 |
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author | Pengcheng Jin Shurong Dong Hao Jin Mengjun Wu |
author_facet | Pengcheng Jin Shurong Dong Hao Jin Mengjun Wu |
author_sort | Pengcheng Jin |
collection | DOAJ |
description | Aimed at portable application, a new integrated process chip for thin film bulk acoustic resonator (FBAR) mass sensor is proposed and verified with 0.18 um CMOS processing in this paper. The longitudinal mode FBAR with back-etched structure is fabricated, which has resonant frequency 1.878 GHz and factor 1200. The FBAR oscillator, based on the current-reuse structure, is designed with Modified Butterworth Van Dyke (MBVD) model. The result shows that the FBAR oscillator operates at 1.878 GHz with a phase noise of −107 dBc/Hz and −135 dBc/Hz at 10 KHz and 100 KHz frequency offset, respectively. The whole process chip size with pads is 1300 μm × 950 μm. The FBAR and process chip are bonded together to sense tiny mass. The measurement results show that this chip precision is 1 KHz with the FBAR frequency gap from 25 kHz to 25 MHz. |
format | Article |
id | doaj-art-089180c02d9443afa8819cdc0a410586 |
institution | Kabale University |
issn | 1687-5249 1687-5257 |
language | English |
publishDate | 2012-01-01 |
publisher | Wiley |
record_format | Article |
series | Journal of Control Science and Engineering |
spelling | doaj-art-089180c02d9443afa8819cdc0a4105862025-02-03T01:21:42ZengWileyJournal of Control Science and Engineering1687-52491687-52572012-01-01201210.1155/2012/923617923617Processing Chip for Thin Film Bulk Acoustic Resonator Mass SensorPengcheng Jin0Shurong Dong1Hao Jin2Mengjun Wu3Department of ISEE, Zhejiang University, Hangzhou 310058, ChinaDepartment of ISEE, Zhejiang University, Hangzhou 310058, ChinaDepartment of ISEE, Zhejiang University, Hangzhou 310058, ChinaDepartment of ISEE, Zhejiang University, Hangzhou 310058, ChinaAimed at portable application, a new integrated process chip for thin film bulk acoustic resonator (FBAR) mass sensor is proposed and verified with 0.18 um CMOS processing in this paper. The longitudinal mode FBAR with back-etched structure is fabricated, which has resonant frequency 1.878 GHz and factor 1200. The FBAR oscillator, based on the current-reuse structure, is designed with Modified Butterworth Van Dyke (MBVD) model. The result shows that the FBAR oscillator operates at 1.878 GHz with a phase noise of −107 dBc/Hz and −135 dBc/Hz at 10 KHz and 100 KHz frequency offset, respectively. The whole process chip size with pads is 1300 μm × 950 μm. The FBAR and process chip are bonded together to sense tiny mass. The measurement results show that this chip precision is 1 KHz with the FBAR frequency gap from 25 kHz to 25 MHz.http://dx.doi.org/10.1155/2012/923617 |
spellingShingle | Pengcheng Jin Shurong Dong Hao Jin Mengjun Wu Processing Chip for Thin Film Bulk Acoustic Resonator Mass Sensor Journal of Control Science and Engineering |
title | Processing Chip for Thin Film Bulk Acoustic Resonator Mass Sensor |
title_full | Processing Chip for Thin Film Bulk Acoustic Resonator Mass Sensor |
title_fullStr | Processing Chip for Thin Film Bulk Acoustic Resonator Mass Sensor |
title_full_unstemmed | Processing Chip for Thin Film Bulk Acoustic Resonator Mass Sensor |
title_short | Processing Chip for Thin Film Bulk Acoustic Resonator Mass Sensor |
title_sort | processing chip for thin film bulk acoustic resonator mass sensor |
url | http://dx.doi.org/10.1155/2012/923617 |
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