Synthesis of Cerium Dioxide High-k Thin Films as a Gate Dielectric in MOS Capacitor
In the present study, the Al/CeO2 / p-Si MOS capacitor was fabricated by depositing the Aluminium (Al) metal layer by thermal evaporation technique on sol-gel derived CeO2 high-k thin films on p-Si substrate. The deposited CeO2 films were characterized by Ellipsometer to study the refractive index t...
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Sumy State University
2013-07-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2013/3/articles/jnep_2013_V5_03002.pdf |
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| author | Anil G. Khairnar Y.S. Mhaisagar A.M. Mahajan |
| author_facet | Anil G. Khairnar Y.S. Mhaisagar A.M. Mahajan |
| author_sort | Anil G. Khairnar |
| collection | DOAJ |
| description | In the present study, the Al/CeO2 / p-Si MOS capacitor was fabricated by depositing the Aluminium (Al) metal layer by thermal evaporation technique on sol-gel derived CeO2 high-k thin films on p-Si substrate. The deposited CeO2 films were characterized by Ellipsometer to study the refractive index that is determined to be 3.62. The FTIR analysis was carried out to obtain chemical bonding characteristics. Capacitance-voltage measurements of Al/CeO2 /p-Si MOS capacitor were carried out to determine the dielectric constant, equivalent oxide thickness (EOT) and flat band shift (VFB) for the deposited CeO2 film of 16.22, 1.62 nm and 0.7 V respectively. The conductance voltage curve was used to determine the interface trap density (Dit) at the CeO2 / p-Si interface that is calculated to be 1.29 × 1013 cm – 2 eV – 1 for measurement frequency of 500 kHz. |
| format | Article |
| id | doaj-art-082092feb94b4c75aaf60ffab3cfd3b6 |
| institution | DOAJ |
| issn | 2077-6772 |
| language | English |
| publishDate | 2013-07-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-082092feb94b4c75aaf60ffab3cfd3b62025-08-20T03:17:23ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722013-07-015303002-103002-3Synthesis of Cerium Dioxide High-k Thin Films as a Gate Dielectric in MOS CapacitorAnil G. Khairnar0Y.S. Mhaisagar1A.M. Mahajan2Department of Electronics, North Maharashtra University Jalgaon, 425001, Maharashtra, IndiaDepartment of Electronics, North Maharashtra University Jalgaon, 425001, Maharashtra, IndiaDepartment of Electronics, North Maharashtra University Jalgaon, 425001, Maharashtra, IndiaIn the present study, the Al/CeO2 / p-Si MOS capacitor was fabricated by depositing the Aluminium (Al) metal layer by thermal evaporation technique on sol-gel derived CeO2 high-k thin films on p-Si substrate. The deposited CeO2 films were characterized by Ellipsometer to study the refractive index that is determined to be 3.62. The FTIR analysis was carried out to obtain chemical bonding characteristics. Capacitance-voltage measurements of Al/CeO2 /p-Si MOS capacitor were carried out to determine the dielectric constant, equivalent oxide thickness (EOT) and flat band shift (VFB) for the deposited CeO2 film of 16.22, 1.62 nm and 0.7 V respectively. The conductance voltage curve was used to determine the interface trap density (Dit) at the CeO2 / p-Si interface that is calculated to be 1.29 × 1013 cm – 2 eV – 1 for measurement frequency of 500 kHz.http://jnep.sumdu.edu.ua/download/numbers/2013/3/articles/jnep_2013_V5_03002.pdfHigh-kCeO2Gate dielectricSol-gelXRDFTI |
| spellingShingle | Anil G. Khairnar Y.S. Mhaisagar A.M. Mahajan Synthesis of Cerium Dioxide High-k Thin Films as a Gate Dielectric in MOS Capacitor Журнал нано- та електронної фізики High-k CeO2 Gate dielectric Sol-gel XRD FTI |
| title | Synthesis of Cerium Dioxide High-k Thin Films as a Gate Dielectric in MOS Capacitor |
| title_full | Synthesis of Cerium Dioxide High-k Thin Films as a Gate Dielectric in MOS Capacitor |
| title_fullStr | Synthesis of Cerium Dioxide High-k Thin Films as a Gate Dielectric in MOS Capacitor |
| title_full_unstemmed | Synthesis of Cerium Dioxide High-k Thin Films as a Gate Dielectric in MOS Capacitor |
| title_short | Synthesis of Cerium Dioxide High-k Thin Films as a Gate Dielectric in MOS Capacitor |
| title_sort | synthesis of cerium dioxide high k thin films as a gate dielectric in mos capacitor |
| topic | High-k CeO2 Gate dielectric Sol-gel XRD FTI |
| url | http://jnep.sumdu.edu.ua/download/numbers/2013/3/articles/jnep_2013_V5_03002.pdf |
| work_keys_str_mv | AT anilgkhairnar synthesisofceriumdioxidehighkthinfilmsasagatedielectricinmoscapacitor AT ysmhaisagar synthesisofceriumdioxidehighkthinfilmsasagatedielectricinmoscapacitor AT ammahajan synthesisofceriumdioxidehighkthinfilmsasagatedielectricinmoscapacitor |