Metasurface-Enhanced Infrared Photodetection Using Layered van der Waals MoSe<sub>2</sub>
Transition metal dichalcogenide (TMD) materials have demonstrated promising potential for applications in photodetection due to their tunable bandgaps, high carrier mobility, and strong light absorption capabilities. However, limited by their intrinsic bandgaps, TMDs are unable to efficiently absorb...
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2025-06-01
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| author | Jinchun Li Zhixiang Xie Tianxiang Zhao Hongliang Li Di Wu Xuechao Yu |
| author_facet | Jinchun Li Zhixiang Xie Tianxiang Zhao Hongliang Li Di Wu Xuechao Yu |
| author_sort | Jinchun Li |
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| description | Transition metal dichalcogenide (TMD) materials have demonstrated promising potential for applications in photodetection due to their tunable bandgaps, high carrier mobility, and strong light absorption capabilities. However, limited by their intrinsic bandgaps, TMDs are unable to efficiently absorb photons with energies below the bandgap, resulting in a significant attenuation of photoresponse in spectral regions beyond the bandgap. This inherently restricts their broadband photodetection performance. By introducing metasurface structures consisting of subwavelength optical elements, localized plasmon resonance effects can be exploited to overcome this absorption limitation, significantly enhancing the light absorption of TMD films. Additionally, the heterogeneous integration process between the metasurface and two-dimensional materials offers low-temperature compatibility advantages, effectively avoiding the limitations imposed by high-temperature doping processes in traditional semiconductor devices. Here, we systematically investigate metasurface-enhanced two-dimensional MoSe<sub>2</sub> photodetectors, demonstrating broadband responsivity extension into the mid-infrared spectrum via precise control of metasurface structural dimensions. The optimized device possesses a wide spectrum response ranging from 808 nm to 10 μm, and the responsivity (<i>R</i>) and specific detection rate (<i>D*</i>) under 4 μm illumination achieve 7.1 mA/W and 1.12 × 10<sup>8</sup> Jones, respectively. Distinct metasurface configurations exhibit varying impacts on optical absorption characteristics and detection spectral ranges, providing experimental foundations for optimizing high-performance photodetectors. This work establishes a practical pathway for developing broadband optoelectronic devices through nanophotonic structure engineering. |
| format | Article |
| id | doaj-art-07fd648eef7b440d8fe32759bdc5b7fa |
| institution | DOAJ |
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| language | English |
| publishDate | 2025-06-01 |
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| spelling | doaj-art-07fd648eef7b440d8fe32759bdc5b7fa2025-08-20T03:16:21ZengMDPI AGNanomaterials2079-49912025-06-01151291310.3390/nano15120913Metasurface-Enhanced Infrared Photodetection Using Layered van der Waals MoSe<sub>2</sub>Jinchun Li0Zhixiang Xie1Tianxiang Zhao2Hongliang Li3Di Wu4Xuechao Yu5Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, ChinaKey Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaKey Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaKey Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaKey Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, ChinaKey Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaTransition metal dichalcogenide (TMD) materials have demonstrated promising potential for applications in photodetection due to their tunable bandgaps, high carrier mobility, and strong light absorption capabilities. However, limited by their intrinsic bandgaps, TMDs are unable to efficiently absorb photons with energies below the bandgap, resulting in a significant attenuation of photoresponse in spectral regions beyond the bandgap. This inherently restricts their broadband photodetection performance. By introducing metasurface structures consisting of subwavelength optical elements, localized plasmon resonance effects can be exploited to overcome this absorption limitation, significantly enhancing the light absorption of TMD films. Additionally, the heterogeneous integration process between the metasurface and two-dimensional materials offers low-temperature compatibility advantages, effectively avoiding the limitations imposed by high-temperature doping processes in traditional semiconductor devices. Here, we systematically investigate metasurface-enhanced two-dimensional MoSe<sub>2</sub> photodetectors, demonstrating broadband responsivity extension into the mid-infrared spectrum via precise control of metasurface structural dimensions. The optimized device possesses a wide spectrum response ranging from 808 nm to 10 μm, and the responsivity (<i>R</i>) and specific detection rate (<i>D*</i>) under 4 μm illumination achieve 7.1 mA/W and 1.12 × 10<sup>8</sup> Jones, respectively. Distinct metasurface configurations exhibit varying impacts on optical absorption characteristics and detection spectral ranges, providing experimental foundations for optimizing high-performance photodetectors. This work establishes a practical pathway for developing broadband optoelectronic devices through nanophotonic structure engineering.https://www.mdpi.com/2079-4991/15/12/913van der Waals materialsmetasurfacesurface plasmon resonancemolybdenum diselenide |
| spellingShingle | Jinchun Li Zhixiang Xie Tianxiang Zhao Hongliang Li Di Wu Xuechao Yu Metasurface-Enhanced Infrared Photodetection Using Layered van der Waals MoSe<sub>2</sub> Nanomaterials van der Waals materials metasurface surface plasmon resonance molybdenum diselenide |
| title | Metasurface-Enhanced Infrared Photodetection Using Layered van der Waals MoSe<sub>2</sub> |
| title_full | Metasurface-Enhanced Infrared Photodetection Using Layered van der Waals MoSe<sub>2</sub> |
| title_fullStr | Metasurface-Enhanced Infrared Photodetection Using Layered van der Waals MoSe<sub>2</sub> |
| title_full_unstemmed | Metasurface-Enhanced Infrared Photodetection Using Layered van der Waals MoSe<sub>2</sub> |
| title_short | Metasurface-Enhanced Infrared Photodetection Using Layered van der Waals MoSe<sub>2</sub> |
| title_sort | metasurface enhanced infrared photodetection using layered van der waals mose sub 2 sub |
| topic | van der Waals materials metasurface surface plasmon resonance molybdenum diselenide |
| url | https://www.mdpi.com/2079-4991/15/12/913 |
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