Electrical Characteristics of ML and BL MoS<sub>2</sub> GAA NS FETs With Source/Drain Metal Contacts
This paper reports source/drain (S/D) contact issues in monolayer and bilayer (BL) <inline-formula> <tex-math notation="LaTeX">$\mathrm {MoS_{2}}$ </tex-math></inline-formula> devices through density-functional-theory (DFT) calculation and device simulation. We begi...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11017515/ |
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