Electrical Characteristics of ML and BL MoS<sub>2</sub> GAA NS FETs With Source/Drain Metal Contacts

Electrical Characteristics of ML and BL MoS<sub>2</sub> GAA NS FETs With Source/Drain Metal Contacts

This paper reports source/drain (S/D) contact issues in monolayer and bilayer (BL) <inline-formula> <tex-math notation="LaTeX">$\mathrm {MoS_{2}}$ </tex-math></inline-formula> devices through density-functional-theory (DFT) calculation and device simulation. We begi...

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Bibliographic Details
Main Authors: Yueh-Ju Chan, Min-Hui Chuang, Yiming Li
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Source/drain metal contacts
NS FETs
density functional theory
device simulation
van der Waals gap
Online Access:https://ieeexplore.ieee.org/document/11017515/
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Summary:This paper reports source/drain (S/D) contact issues in monolayer and bilayer (BL) <inline-formula> <tex-math notation="LaTeX">$\mathrm {MoS_{2}}$ </tex-math></inline-formula> devices through density-functional-theory (DFT) calculation and device simulation. We begin by analyzing material properties and van der Waals gaps at metal contacts of <inline-formula> <tex-math notation="LaTeX">$\mathrm {MoS_{2}}$ </tex-math></inline-formula> using DFT calculation. These results are then used for device simulation, aligning closely with experimental data. For the first time, the model is extended to 3D gate-all-around (GAA) nanosheet (NS) field-effect transistors (FETs) simulation, enabling contact resistance <inline-formula> <tex-math notation="LaTeX">$(R_{C})$ </tex-math></inline-formula> estimation. This work addresses key challenges by reducing computational demands compared to non-equilibrium Green function method and accurately calibrating devices with various metal contacts and gate lengths. Simulations with C-type S/D contacts achieve an <inline-formula> <tex-math notation="LaTeX">$R_{C}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$89.6~\Omega $ </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m in 7-channel GAA BL <inline-formula> <tex-math notation="LaTeX">$\mathrm {MoS_{2}}$ </tex-math></inline-formula> NS FETs, offering an interesting study for 2D material-based devices.
ISSN:2168-6734

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