Effect of Grain Size on the Threshold Voltage for Double-Gate Polycrystaline Silicon MOSFET
The effect of grain size (D) on the threshold voltage (Vth) for double gate polycrystalline silicon MOSFET is investigated theoretically in terms of grain boundary trap states (NT). It is found that the threshold voltage (Vth) increases non-linearly with increasing silicon-oxide thickness (tox) for...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%203/articles/jnep_2011_V3_N1(Part3)_474-478.pdf |
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