Growth Structural and Optical Properties of the Thermally Evaporated Tin Diselenide (SnSe2) Thin Films

Tin diselenide (SnSe2) compound was prepared by melt-quenching technique from its constituent elements. The phase structure and composition of the chemical constituents present in the bulk has been determined using X-ray diffraction (XRD) and energy dispersion X-ray analysis (EDAX) respectively. SnS...

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Bibliographic Details
Main Authors: R. Sachdeva1, M. Sharma1, A. Devi1, U. Parihar1, N. Kumar1, N. Padha1, C.J. Panchal
Format: Article
Language:English
Published: Sumy State University 2011-01-01
Series:Журнал нано- та електронної фізики
Subjects:
Online Access:http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%203/articles/jnep_2011_V3_N1(Part3)_507-513.pdf
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Summary:Tin diselenide (SnSe2) compound was prepared by melt-quenching technique from its constituent elements. The phase structure and composition of the chemical constituents present in the bulk has been determined using X-ray diffraction (XRD) and energy dispersion X-ray analysis (EDAX) respectively. SnSe2 thin films were grown using direct thermal evaporation of SnSe2 compound material on chemically cleaned glass substrate, which were held at different substrate temperatures. X-ray diffraction and Scanning Electron Microscopy (SEM) were used to examine structure and surface morphology of the films. The investigations show that the films grown above 150 °C are single phase and polycrystalline in nature. VIS-IR Spectra of the films were recorded in the wavelength range 380 nm to 1300 nm. The data has been analyzed to find optical parameters like absorption coefficient and energy bandgap.
ISSN:2077-6772