Strained two-dimensional tungsten diselenide for mechanically tunable exciton transport
Abstract Tightly bound electron-hole pairs (excitons) hosted in atomically-thin semiconductors have emerged as prospective elements in optoelectronic devices for ultrafast and secured information transfer. The controlled exciton transport in such excitonic devices requires manipulating potential ene...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-12-01
|
| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-55135-8 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850048998649364480 |
|---|---|
| author | Jin Myung Kim Kwang-Yong Jeong Soyeong Kwon Jae-Pil So Michael Cai Wang Peter Snapp Hong-Gyu Park SungWoo Nam |
| author_facet | Jin Myung Kim Kwang-Yong Jeong Soyeong Kwon Jae-Pil So Michael Cai Wang Peter Snapp Hong-Gyu Park SungWoo Nam |
| author_sort | Jin Myung Kim |
| collection | DOAJ |
| description | Abstract Tightly bound electron-hole pairs (excitons) hosted in atomically-thin semiconductors have emerged as prospective elements in optoelectronic devices for ultrafast and secured information transfer. The controlled exciton transport in such excitonic devices requires manipulating potential energy gradient of charge-neutral excitons, while electrical gating or nanoscale straining have shown limited efficiency of exciton transport at room temperature. Here, we report strain gradient induced exciton transport in monolayer tungsten diselenide (WSe2) across microns at room temperature via steady-state pump-probe measurement. Wrinkle architecture enabled optically-resolvable local strain (2.4%) and energy gradient (49 meV/μm) to WSe2. We observed strain gradient induced flux of high-energy excitons and emission of funneled, low-energy excitons at the 2.5 μm-away pump point with nearly 45% of relative emission intensity compared to that of excited excitons. Our results strongly support the strain-driven manipulation of exciton funneling in two-dimensional semiconductors at room temperature, opening up future opportunities of 2D straintronic exciton devices. |
| format | Article |
| id | doaj-art-07313a6910bb4fdb9e801fc935258cf7 |
| institution | DOAJ |
| issn | 2041-1723 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-07313a6910bb4fdb9e801fc935258cf72025-08-20T02:53:48ZengNature PortfolioNature Communications2041-17232024-12-011511910.1038/s41467-024-55135-8Strained two-dimensional tungsten diselenide for mechanically tunable exciton transportJin Myung Kim0Kwang-Yong Jeong1Soyeong Kwon2Jae-Pil So3Michael Cai Wang4Peter Snapp5Hong-Gyu Park6SungWoo Nam7Department of Materials Science and Engineering, University of Illinois at Urbana-ChampaignDepartment of Physics, Chungnam National UniversityDepartment of Mechanical and Aerospace Engineering, University of California, IrvineDepartment of Physics and Astronomy and Institute of Applied Physics, Seoul National UniversityDepartment of Mechanical Science and Engineering, University of Illinois at Urbana-ChampaignDepartment of Mechanical Science and Engineering, University of Illinois at Urbana-ChampaignDepartment of Physics and Astronomy and Institute of Applied Physics, Seoul National UniversityDepartment of Mechanical and Aerospace Engineering, University of California, IrvineAbstract Tightly bound electron-hole pairs (excitons) hosted in atomically-thin semiconductors have emerged as prospective elements in optoelectronic devices for ultrafast and secured information transfer. The controlled exciton transport in such excitonic devices requires manipulating potential energy gradient of charge-neutral excitons, while electrical gating or nanoscale straining have shown limited efficiency of exciton transport at room temperature. Here, we report strain gradient induced exciton transport in monolayer tungsten diselenide (WSe2) across microns at room temperature via steady-state pump-probe measurement. Wrinkle architecture enabled optically-resolvable local strain (2.4%) and energy gradient (49 meV/μm) to WSe2. We observed strain gradient induced flux of high-energy excitons and emission of funneled, low-energy excitons at the 2.5 μm-away pump point with nearly 45% of relative emission intensity compared to that of excited excitons. Our results strongly support the strain-driven manipulation of exciton funneling in two-dimensional semiconductors at room temperature, opening up future opportunities of 2D straintronic exciton devices.https://doi.org/10.1038/s41467-024-55135-8 |
| spellingShingle | Jin Myung Kim Kwang-Yong Jeong Soyeong Kwon Jae-Pil So Michael Cai Wang Peter Snapp Hong-Gyu Park SungWoo Nam Strained two-dimensional tungsten diselenide for mechanically tunable exciton transport Nature Communications |
| title | Strained two-dimensional tungsten diselenide for mechanically tunable exciton transport |
| title_full | Strained two-dimensional tungsten diselenide for mechanically tunable exciton transport |
| title_fullStr | Strained two-dimensional tungsten diselenide for mechanically tunable exciton transport |
| title_full_unstemmed | Strained two-dimensional tungsten diselenide for mechanically tunable exciton transport |
| title_short | Strained two-dimensional tungsten diselenide for mechanically tunable exciton transport |
| title_sort | strained two dimensional tungsten diselenide for mechanically tunable exciton transport |
| url | https://doi.org/10.1038/s41467-024-55135-8 |
| work_keys_str_mv | AT jinmyungkim strainedtwodimensionaltungstendiselenideformechanicallytunableexcitontransport AT kwangyongjeong strainedtwodimensionaltungstendiselenideformechanicallytunableexcitontransport AT soyeongkwon strainedtwodimensionaltungstendiselenideformechanicallytunableexcitontransport AT jaepilso strainedtwodimensionaltungstendiselenideformechanicallytunableexcitontransport AT michaelcaiwang strainedtwodimensionaltungstendiselenideformechanicallytunableexcitontransport AT petersnapp strainedtwodimensionaltungstendiselenideformechanicallytunableexcitontransport AT honggyupark strainedtwodimensionaltungstendiselenideformechanicallytunableexcitontransport AT sungwoonam strainedtwodimensionaltungstendiselenideformechanicallytunableexcitontransport |