Electrical and Optical Properties of Ge𝑥Si𝟏−𝑥:H Thin Films Prepared by Thermal Evaporation Method
Thin a-Ge𝑥Si1−𝑥:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As), and substrate temperature, were employed. Stoichiometry of the thin films composition was confirm...
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| Format: | Article |
| Language: | English |
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Wiley
2010-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2010/428739 |
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| author | A. A. J. Al-Douri M. F. A. Alias A. A. Alnajjar M. N. Makadsi |
| author_facet | A. A. J. Al-Douri M. F. A. Alias A. A. Alnajjar M. N. Makadsi |
| author_sort | A. A. J. Al-Douri |
| collection | DOAJ |
| description | Thin a-Ge𝑥Si1−𝑥:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As), and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on values of the optical constants was determined. Accordingly, models of the density of states for the Ge0.5Si0.5:H thin films as pure, doped with 3.5% of Al (p-type) and that doped with 3.5% As (n-type), were proposed. |
| format | Article |
| id | doaj-art-06dd53d1c66743f89912019621d42871 |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2010-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-06dd53d1c66743f89912019621d428712025-02-03T01:12:55ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242010-01-01201010.1155/2010/428739428739Electrical and Optical Properties of Ge𝑥Si𝟏−𝑥:H Thin Films Prepared by Thermal Evaporation MethodA. A. J. Al-Douri0M. F. A. Alias1A. A. Alnajjar2M. N. Makadsi3Applied Physics Department, College of Sciences, University of Sharjah, P.O. Box 27272 Sharjah, UAEPhysics Department, College of Sciences, University of Baghdad, P.O. Box 47162, Jadiriyah, Baghdad, IraqApplied Physics Department, College of Sciences, University of Sharjah, P.O. Box 27272 Sharjah, UAEPhysics Department, College of Sciences, University of Baghdad, P.O. Box 47162, Jadiriyah, Baghdad, IraqThin a-Ge𝑥Si1−𝑥:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As), and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on values of the optical constants was determined. Accordingly, models of the density of states for the Ge0.5Si0.5:H thin films as pure, doped with 3.5% of Al (p-type) and that doped with 3.5% As (n-type), were proposed.http://dx.doi.org/10.1155/2010/428739 |
| spellingShingle | A. A. J. Al-Douri M. F. A. Alias A. A. Alnajjar M. N. Makadsi Electrical and Optical Properties of Ge𝑥Si𝟏−𝑥:H Thin Films Prepared by Thermal Evaporation Method Advances in Condensed Matter Physics |
| title | Electrical and Optical Properties of Ge𝑥Si𝟏−𝑥:H Thin Films Prepared by Thermal Evaporation Method |
| title_full | Electrical and Optical Properties of Ge𝑥Si𝟏−𝑥:H Thin Films Prepared by Thermal Evaporation Method |
| title_fullStr | Electrical and Optical Properties of Ge𝑥Si𝟏−𝑥:H Thin Films Prepared by Thermal Evaporation Method |
| title_full_unstemmed | Electrical and Optical Properties of Ge𝑥Si𝟏−𝑥:H Thin Films Prepared by Thermal Evaporation Method |
| title_short | Electrical and Optical Properties of Ge𝑥Si𝟏−𝑥:H Thin Films Prepared by Thermal Evaporation Method |
| title_sort | electrical and optical properties of ge𝑥si𝟏 𝑥 h thin films prepared by thermal evaporation method |
| url | http://dx.doi.org/10.1155/2010/428739 |
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