A Study of Thin Film Resistors Prepared Using Ni-Cr-Si-Al-Ta High Entropy Alloy
Ni-Cr-Si-Al-Ta resistive thin films were prepared on glass and Al2O3 substrates by DC magnetron cosputtering from targets of Ni0.35-Cr0.25-Si0.2-Al0.2 casting alloy and Ta metal. Electrical properties and microstructures of Ni-Cr-Si-Al-Ta films under different sputtering powers and annealing tempera...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2015/847191 |
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| Summary: | Ni-Cr-Si-Al-Ta resistive thin films were prepared on glass and Al2O3 substrates by DC magnetron cosputtering from targets of Ni0.35-Cr0.25-Si0.2-Al0.2 casting alloy and Ta metal. Electrical properties and microstructures of Ni-Cr-Si-Al-Ta films under different sputtering powers and annealing temperatures were investigated. The phase evolution, microstructure, and composition of Ni-Cr-Si-Al-Ta films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). When the annealing temperature was set to 300°C, the Ni-Cr-Si-Al-Ta films with an amorphous structure were observed. When the annealing temperature was at 500°C, the Ni-Cr-Si-Al-Ta films crystallized into Al0.9Ni4.22, Cr2Ta, and Ta5Si3 phases. The Ni-Cr-Si-Al-Ta films deposited at 100 W and annealed at 300°C which exhibited the higher resistivity 2215 μΩ-cm with −10 ppm/°C of temperature coefficient of resistance (TCR). |
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| ISSN: | 1687-8434 1687-8442 |