A Study of The Evolution of The Silicon Nanocrystallites in The Amorphous Silicon Carbide Under Argon Dilution of the Source Gases
Structural evolution of the hydrogenated amorphous silicon carbide (a-SiC:H) films deposited by rf-PECVD from a mixture of SiH4 and CH4 diluted in Ar shows that a smooth transition from amorphous to nanocrystalline phase occurs in the material by increasing the Ar dilution. The optical band gap (Eg)...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%201/articles/jnep_2011_V3_N1(Part1)_155-161.pdf |
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