A Study of The Evolution of The Silicon Nanocrystallites in The Amorphous Silicon Carbide Under Argon Dilution of the Source Gases
Structural evolution of the hydrogenated amorphous silicon carbide (a-SiC:H) films deposited by rf-PECVD from a mixture of SiH4 and CH4 diluted in Ar shows that a smooth transition from amorphous to nanocrystalline phase occurs in the material by increasing the Ar dilution. The optical band gap (Eg)...
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Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%201/articles/jnep_2011_V3_N1(Part1)_155-161.pdf |
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| author | A. Kole P. Chaudhuri |
| author_facet | A. Kole P. Chaudhuri |
| author_sort | A. Kole |
| collection | DOAJ |
| description | Structural evolution of the hydrogenated amorphous silicon carbide (a-SiC:H) films deposited by rf-PECVD from a mixture of SiH4 and CH4 diluted in Ar shows that a smooth transition from amorphous to nanocrystalline phase occurs in the material by increasing the Ar dilution. The optical band gap (Eg) decreases from 1.99 eV to 1.91 eV and the H-content (CH) decreases from 14.32 at% to 5.29 at% by increasing the dilution from 94 % to 98 %. at 98 % Ar dilution, the material contains irregular shape Si nanocrystallites with sizes over 10 nm. Increasing the Ar dilution further to 98.4 % leads to a reduction of the size of the Si nanocrystals to regular shape Si quantum dots of size about 5 nm. The quantum confinement effect is apparent from the increase in the Eg value to 2.6 eV at 98.4 % Ar dilution. Formation of Si quantum dots may be explained by the etching of the nanocrystallites of Si by the energetic ion bombardment from the plasma. |
| format | Article |
| id | doaj-art-062ed33f52ae42edbda566a1fd481125 |
| institution | DOAJ |
| issn | 2077-6772 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-062ed33f52ae42edbda566a1fd4811252025-08-20T03:16:39ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722011-01-0131155161A Study of The Evolution of The Silicon Nanocrystallites in The Amorphous Silicon Carbide Under Argon Dilution of the Source GasesA. KoleP. ChaudhuriStructural evolution of the hydrogenated amorphous silicon carbide (a-SiC:H) films deposited by rf-PECVD from a mixture of SiH4 and CH4 diluted in Ar shows that a smooth transition from amorphous to nanocrystalline phase occurs in the material by increasing the Ar dilution. The optical band gap (Eg) decreases from 1.99 eV to 1.91 eV and the H-content (CH) decreases from 14.32 at% to 5.29 at% by increasing the dilution from 94 % to 98 %. at 98 % Ar dilution, the material contains irregular shape Si nanocrystallites with sizes over 10 nm. Increasing the Ar dilution further to 98.4 % leads to a reduction of the size of the Si nanocrystals to regular shape Si quantum dots of size about 5 nm. The quantum confinement effect is apparent from the increase in the Eg value to 2.6 eV at 98.4 % Ar dilution. Formation of Si quantum dots may be explained by the etching of the nanocrystallites of Si by the energetic ion bombardment from the plasma.http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%201/articles/jnep_2011_V3_N1(Part1)_155-161.pdfSilicon CarbideRF- PECVDAr DilutionOptical Band GapSi Quantum DotsQuantum Confinement |
| spellingShingle | A. Kole P. Chaudhuri A Study of The Evolution of The Silicon Nanocrystallites in The Amorphous Silicon Carbide Under Argon Dilution of the Source Gases Журнал нано- та електронної фізики Silicon Carbide RF- PECVD Ar Dilution Optical Band Gap Si Quantum Dots Quantum Confinement |
| title | A Study of The Evolution of The Silicon Nanocrystallites in The Amorphous Silicon Carbide Under Argon Dilution of the Source Gases |
| title_full | A Study of The Evolution of The Silicon Nanocrystallites in The Amorphous Silicon Carbide Under Argon Dilution of the Source Gases |
| title_fullStr | A Study of The Evolution of The Silicon Nanocrystallites in The Amorphous Silicon Carbide Under Argon Dilution of the Source Gases |
| title_full_unstemmed | A Study of The Evolution of The Silicon Nanocrystallites in The Amorphous Silicon Carbide Under Argon Dilution of the Source Gases |
| title_short | A Study of The Evolution of The Silicon Nanocrystallites in The Amorphous Silicon Carbide Under Argon Dilution of the Source Gases |
| title_sort | study of the evolution of the silicon nanocrystallites in the amorphous silicon carbide under argon dilution of the source gases |
| topic | Silicon Carbide RF- PECVD Ar Dilution Optical Band Gap Si Quantum Dots Quantum Confinement |
| url | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%201/articles/jnep_2011_V3_N1(Part1)_155-161.pdf |
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