Insights into high electric-field-induced strain in BiAlO3 modified Bi1/2Na1/2TiO3 films
The development of high-strain piezoelectric materials has presented a longstanding challenge, particularly in the development of high-strain polycrystalline lead-free piezoelectric thin films. In this work, we present a strategy for customizing the electrostrain in lead-free thin films through phas...
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| Format: | Article |
| Language: | English |
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Tsinghua University Press
2025-03-01
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| Series: | Journal of Advanced Ceramics |
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| Online Access: | https://www.sciopen.com/article/10.26599/JAC.2025.9221034 |
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| author | Muhammad Sheeraz Sung Sik Won Jong Pil Kim Sabir Ali Fazli Akram Hyoung-Su Han Bong Chan Park Tae Heon Kim Ill Won Kim Aman Ullah Chang Won Ahn |
| author_facet | Muhammad Sheeraz Sung Sik Won Jong Pil Kim Sabir Ali Fazli Akram Hyoung-Su Han Bong Chan Park Tae Heon Kim Ill Won Kim Aman Ullah Chang Won Ahn |
| author_sort | Muhammad Sheeraz |
| collection | DOAJ |
| description | The development of high-strain piezoelectric materials has presented a longstanding challenge, particularly in the development of high-strain polycrystalline lead-free piezoelectric thin films. In this work, we present a strategy for customizing the electrostrain in lead-free thin films through phase transition engineering. In this study, we achieved a high recoverable electrostrain in a Bi1/2Na1/2TiO3–BiAlO3 (BNT–BA) film. To accomplish this, ferroelectric BNT and BNT–BA films with identical thicknesses of 500 nm were fabricated on Pt(111)/TiO2/SiO2/Si(100) substrates via a sol-gel method. Compared with the BNT film, the BNT–BA film exhibited a greater polarization response and superior field strength endurance, maintaining the energy storage density beyond the breakdown field strength of the BNT. The BNT–BA film demonstrated a large unipolar strain of S = 0.43% with a normalized strain (maximum strain/maximum applied electric field (Smax/Emax)) of 203 pm/V, followed by an effective transverse piezoelectric coefficient (e31,f∗) of ~2.48 C/m2, which was more than two times greater than the value obtained for BNT (i.e., maximum strain/maximum applied electric field (Smax/Emax) = 72 pm/V and e31,f∗ of ~1.09 C/m2). This high strain response in the BNT–BA film can be attributed to the electric-field-induced phase transition of the mixed (i.e., cubic and rhombohedral) phases into rhombohedral and tetragonal phases (mainly the rhombohedral structure), which recover back to the original state when the electric field is removed. These findings suggest new pathways for achieving significant strain levels via alternative mechanisms, potentially enhancing the effectiveness and expanding the applications of piezoelectric materials. |
| format | Article |
| id | doaj-art-061df83bc70f4b54880a4ef8b105e33d |
| institution | DOAJ |
| issn | 2226-4108 2227-8508 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Tsinghua University Press |
| record_format | Article |
| series | Journal of Advanced Ceramics |
| spelling | doaj-art-061df83bc70f4b54880a4ef8b105e33d2025-08-20T02:56:01ZengTsinghua University PressJournal of Advanced Ceramics2226-41082227-85082025-03-01143922103410.26599/JAC.2025.9221034Insights into high electric-field-induced strain in BiAlO3 modified Bi1/2Na1/2TiO3 filmsMuhammad Sheeraz0Sung Sik Won1Jong Pil Kim2Sabir Ali3Fazli Akram4Hyoung-Su Han5Bong Chan Park6Tae Heon Kim7Ill Won Kim8Aman Ullah9Chang Won Ahn10Department of Physics and Energy Harvest Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of KoreaResearch Center, Kairos Co., Ltd., Suwon 16229, Republic of KoreaBusan Center, Korea Basic Science Institute, Busan 46742, Republic of KoreaDepartment of Physics, University of Science and Technology, Bannu 28100, PakistanCenter for High Technology Materials and the Department of Mechanical Engineering, The University of New Mexico, Albuquerque 87131, USASchool of Materials Science and Engineering, University of Ulsan, Ulsan 44776, Republic of KoreaDepartment of Physics and Energy Harvest Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of KoreaDepartment of Physics and Energy Harvest Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of KoreaDepartment of Physics and Energy Harvest Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of KoreaDepartment of Physics, University of Science and Technology, Bannu 28100, PakistanDepartment of Physics and Energy Harvest Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of KoreaThe development of high-strain piezoelectric materials has presented a longstanding challenge, particularly in the development of high-strain polycrystalline lead-free piezoelectric thin films. In this work, we present a strategy for customizing the electrostrain in lead-free thin films through phase transition engineering. In this study, we achieved a high recoverable electrostrain in a Bi1/2Na1/2TiO3–BiAlO3 (BNT–BA) film. To accomplish this, ferroelectric BNT and BNT–BA films with identical thicknesses of 500 nm were fabricated on Pt(111)/TiO2/SiO2/Si(100) substrates via a sol-gel method. Compared with the BNT film, the BNT–BA film exhibited a greater polarization response and superior field strength endurance, maintaining the energy storage density beyond the breakdown field strength of the BNT. The BNT–BA film demonstrated a large unipolar strain of S = 0.43% with a normalized strain (maximum strain/maximum applied electric field (Smax/Emax)) of 203 pm/V, followed by an effective transverse piezoelectric coefficient (e31,f∗) of ~2.48 C/m2, which was more than two times greater than the value obtained for BNT (i.e., maximum strain/maximum applied electric field (Smax/Emax) = 72 pm/V and e31,f∗ of ~1.09 C/m2). This high strain response in the BNT–BA film can be attributed to the electric-field-induced phase transition of the mixed (i.e., cubic and rhombohedral) phases into rhombohedral and tetragonal phases (mainly the rhombohedral structure), which recover back to the original state when the electric field is removed. These findings suggest new pathways for achieving significant strain levels via alternative mechanisms, potentially enhancing the effectiveness and expanding the applications of piezoelectric materials.https://www.sciopen.com/article/10.26599/JAC.2025.9221034electrostrainpiezoelectricsbi1/2na1/2tio3 (bnt)bialo3 (ba)thin filmsphase transition |
| spellingShingle | Muhammad Sheeraz Sung Sik Won Jong Pil Kim Sabir Ali Fazli Akram Hyoung-Su Han Bong Chan Park Tae Heon Kim Ill Won Kim Aman Ullah Chang Won Ahn Insights into high electric-field-induced strain in BiAlO3 modified Bi1/2Na1/2TiO3 films Journal of Advanced Ceramics electrostrain piezoelectrics bi1/2na1/2tio3 (bnt) bialo3 (ba) thin films phase transition |
| title | Insights into high electric-field-induced strain in BiAlO3 modified Bi1/2Na1/2TiO3 films |
| title_full | Insights into high electric-field-induced strain in BiAlO3 modified Bi1/2Na1/2TiO3 films |
| title_fullStr | Insights into high electric-field-induced strain in BiAlO3 modified Bi1/2Na1/2TiO3 films |
| title_full_unstemmed | Insights into high electric-field-induced strain in BiAlO3 modified Bi1/2Na1/2TiO3 films |
| title_short | Insights into high electric-field-induced strain in BiAlO3 modified Bi1/2Na1/2TiO3 films |
| title_sort | insights into high electric field induced strain in bialo3 modified bi1 2na1 2tio3 films |
| topic | electrostrain piezoelectrics bi1/2na1/2tio3 (bnt) bialo3 (ba) thin films phase transition |
| url | https://www.sciopen.com/article/10.26599/JAC.2025.9221034 |
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