Doping-dependent fixed charges in SiC/SiO2 structure

Doping-dependent fixed charges in SiC/SiO2 structure

Doping-dependent fixed charges were found in SiC/SiO _2 structures through a study on threshold voltage in both n- and p-channel SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with various body doping concentrations. Positive fixed charges increase for the p-body (n-channel) device...

Full description

Saved in:
Bibliographic Details
Main Authors: Kyota Mikami, Mitsuaki Kaneko, Tsunenobu Kimoto
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
Subjects:
silicon carbide
MOSFETs
threshold voltage
fixed charges
Online Access:https://doi.org/10.35848/1882-0786/adb539
Tags: Add Tag
No Tags, Be the first to tag this record!

Similar Items

Similar Items